SCHEMBL3481798

SCHEMBL3481798

CCCC[Si](CC)(CC)OC

nearest known ligand 0.34

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.34
TSHR P16473 2/20 0.32
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482907 0.94 LMNA (0.34) LMNATSHRTHRB
SCHEMBL14265443 0.92 LMNA (0.38) LMNATSHRTHRB
SCHEMBL14265456 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL27959381 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL14265440 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL5575097 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL3481526 0.90 LMNA (0.32) LMNA
SCHEMBL14265444 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL5573916 0.90 LMNA (0.41) LMNATSHRTHRB
SCHEMBL704054 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107141313-A Transparent oxide electrode and its production method that surface modifier, surface for transparent oxide electrode are modified 信越化学工业株式会社 2017-09-08 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8962140-B2 Functionalized core-shell nanoparticles BASF SE (DE) 2015-02-24 US disclosed
CN-103848859-A Surface modifier for transparent oxide electrode, surface-modified transparent oxide electrode, and method for producing same SHINETSU CHEMICAL CO 2014-06-11 CN disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20130096241-A1 FUNCTIONALIZED NANOPARTICLES BASF SE (DE) 2013-04-18 US disclosed
CN-102308020-A Insulating film material, and film formation method utilizing the material, and insulating film NAT INST FOR MATERIAL SCIENCE 2012-01-04 CN disclosed
US-20110313184-A1 INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM TAIYO NIPPON SANSO CORPORATION (JP) 2011-12-22 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20030151032-A1 Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof JSR CORPORATION (JP) 2003-08-14 US disclosed
US-6548582-B2 Inorganic particles, binder resin and at least one plasticizer selected from dialk(en)yl ester of alkanedioic acids, or alkoxyalkylylated esters therof, or 1,2-propanediol 1-alkanoates; flexibility JSR CORPORATION (JP) 2003-04-15 US disclosed
EP-0877003-B1 Glass paste composition JSR CORP (JP) 2002-09-18 EP disclosed
US-20020035183-A1 Inorgaic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-03-21 US disclosed
US-20020016401-A1 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-02-07 US disclosed
US-6339118-B1 FOR FORMING BARRIER, ELECTRODE, RESISTOR, DIELECTRIC LAYER, PHOSPHOR, COLOR FILTER OR BLACK MATRIX OF PLASMA DISPLAY PANEL JSR CORPORATION (JP) 2002-01-15 US disclosed
EP-1003199-A2 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR Corporation (JP) 2000-05-24 EP disclosed
US-6046121-A MIXTURE COMPRISING GLASS POWDER, HYDROPHILIC ACRYLATE POLYMER BINDER RESIN IN A NONAQUEOUS SOLVENT HAVING BOILING POINT BETWEEN 100 AND 200 DEGREES C., AND A LOW VAPOR PRESSURE JSR CORPORATION (JP) 2000-04-04 US disclosed
EP-0987228-A2 Glass paste composition, and transfer film and plasma display panel comprising the same JSR Corporation (JP) 2000-03-22 EP disclosed
EP-0877003-A2 Glass paste composition JSR Corporation (JP) 1998-11-11 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110313184-A1 INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM APOB, HMGCR, SREBF1 LMNA 158/4885TSHR 4632/4885THRB 3617/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.