Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 2/20 | 0.34 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481526 | 0.95 | LMNA (0.32) | LMNA | |
| SCHEMBL3481798 | 0.94 | LMNA (0.34) | LMNATSHRTHRB | |
| SCHEMBL537511 | 0.88 | LMNA (0.37) | LMNATSHRTHRB | |
| SCHEMBL14265443 | 0.86 | LMNA (0.38) | LMNATSHRTHRB | |
| SCHEMBL703661 | 0.86 | LMNA (0.35) | LMNATSHRTHRB | |
| SCHEMBL707567 | 0.86 | LMNA (0.35) | LMNATSHRTHRB | |
| SCHEMBL703497 | 0.86 | LMNA (0.35) | LMNATSHRTHRB | |
| SCHEMBL14265444 | 0.84 | LMNA (0.41) | LMNATSHRTHRB | |
| SCHEMBL5575097 | 0.84 | LMNA (0.41) | LMNATSHRTHRB | |
| SCHEMBL5573916 | 0.84 | LMNA (0.41) | LMNATSHRTHRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| CN-101641767-B | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | FUJITSU LTD | 2013-10-30 | — | — | CN | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |