SCHEMBL3481823

SCHEMBL3481823

CCCO[Si](CCCN1CCOCC1)(OCCC)OCCC

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.50
MAPK1 P28482 2/20 0.50
CYP1A2 P05177 1/20 0.50
CHRM2 P08172 1/20 0.50
CHRM1 P11229 1/20 0.50
HTR2A P28223 1/20 0.50
SCN1A P35498 1/20 0.50
HTR2B P41595 1/20 0.50
KCNH2 Q12809 1/20 0.50
SCN2A Q99250 1/20 0.50
SIGMAR1 Q99720 1/20 0.50
SCN3A Q9NY46 1/20 0.50
HRH3 Q9Y5N1 1/20 0.50
USP2 O75604 2/20 0.49
LMNA P02545 2/20 0.49
SMN1; SMN2 Q16637 2/20 0.43
KEAP1 Q14145 1/20 0.43
KDM4E B2RXH2 1/20 0.40
HTT P42858 1/20 0.40
HPGD P15428 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482391 0.87 ALDH1A1 (0.50) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL612716 0.86 SMN1; SMN2 (0.46) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL28862350 0.81 ALDH1A1 (0.44) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL11656246 0.81 CXCR4 (0.42) SIGMAR1HRH3SMN1; SMN2
SCHEMBL25211866 0.80 ALDH1A1 (0.41) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL9516216 0.80 ALDH1A1 (0.43) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL29288458 0.80 ALDH1A1 (0.43) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL125043 0.79 SMN1; SMN2 (0.48) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL31687761 0.79 ALDH1A1 (0.42) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL31687756 0.79 ALDH1A1 (0.42) ALDH1A1MAPK1CYP1A2CHRM2CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed