SCHEMBL3482391

SCHEMBL3482391

CCCO[Si](C)(C)CCCN1CCOCC1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.50
MAPK1 P28482 2/20 0.50
CYP1A2 P05177 1/20 0.50
CHRM2 P08172 1/20 0.50
CHRM1 P11229 1/20 0.50
HTR2A P28223 1/20 0.50
SCN1A P35498 1/20 0.50
HTR2B P41595 1/20 0.50
KCNH2 Q12809 1/20 0.50
SCN2A Q99250 1/20 0.50
SIGMAR1 Q99720 1/20 0.50
SCN3A Q9NY46 1/20 0.50
HRH3 Q9Y5N1 1/20 0.50
LMNA P02545 2/20 0.49
USP2 O75604 1/20 0.49
KEAP1 Q14145 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
KDM4E B2RXH2 1/20 0.40
HTT P42858 1/20 0.40
HPGD P15428 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481823 0.87 ALDH1A1 (0.50) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL2797041 0.86 SMN1; SMN2 (0.46) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL3482540 0.79 SMN1; SMN2 (0.48) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL612716 0.76 SMN1; SMN2 (0.46) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL612357 0.76 SMN1; SMN2 (0.46) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL10928264 0.75 ALDH1A1 (0.60) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL3305244 0.74 ALDH1A1 (0.54) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL13532385 0.74 KEAP1 (0.56) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL26840776 0.74 ALDH1A1 (0.54) ALDH1A1MAPK1CYP1A2CHRM2CHRM1
SCHEMBL84935 0.73 ALDH1A1 (0.61) ALDH1A1MAPK1CYP1A2CHRM2CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed