Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | THRB | P10828 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482477 | 0.94 | TSHR (0.35) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL3482195 | 0.88 | TSHR (0.35) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL3481973 | 0.88 | TSHR (0.35) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL3482286 | 0.88 | TSHR (0.35) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL3481902 | 0.88 | — | — | |
| SCHEMBL28014427 | 0.86 | TSHR (0.33) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL1988893 | 0.82 | — | — | |
| SCHEMBL272672 | 0.82 | TSHR (0.40) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL9745674 | 0.80 | TSHR (0.39) | ALDH1A1TSHRLMNASMN1; SMN2THRB | |
| SCHEMBL6514982 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |