SCHEMBL3482477

SCHEMBL3482477

CCCC[Si](O)(CC)CCCC

nearest known ligand 0.35

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.35
LMNA P02545 3/20 0.35
ALDH1A1 P00352 2/20 0.35
THRB P10828 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
HSD17B10 Q99714 1/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
CES2 O00748 1/20 0.30
CES1 P23141 1/20 0.30
ANPEP P15144 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481855 0.94 ALDH1A1 (0.32) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL3481973 0.94 TSHR (0.35) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL28014427 0.91 TSHR (0.33) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL272672 0.87 TSHR (0.40) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL9745674 0.85 TSHR (0.39) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL8778115 0.84 TSHR (0.38) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL28586451 0.84 TSHR (0.38) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL28593181 0.84 TSHR (0.38) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL3482286 0.81 TSHR (0.35) TSHRLMNAALDH1A1THRBSMN1; SMN2
SCHEMBL3482195 0.81 TSHR (0.35) TSHRLMNAALDH1A1THRBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9695095-B2 Process for preparing a catalyst based on a group VIII metal and containing silicon, and a process of selective hydrogenation implementing said catalyst IFP Energies Nouvelles (FR) 2017-07-04 US disclosed
CN-104302399-B Process for preparing a catalyst based on a metal of group VIII and comprising silicon, and selective hydrogenation process using said catalyst IFP 新能源公司 2017-03-22 CN disclosed
US-20150141718-A1 PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON, AND A PROCESS OF SELECTIVE HYDROGENATION IMPLEMENTING SAID CATALYST IFP Energies Nouvelles (FR) 2015-05-21 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
CN-104302399-A Process for preparing a catalyst based on a metal of group VIII and comprising silicon, and selective hydrogenation process using said catalyst IFP Energies Nouvelles 2015-01-21 CN disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed