SCHEMBL3481902

SCHEMBL3481902

CCC[Si](O)(CC)CCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1988893 0.93
SCHEMBL6514982 0.90
SCHEMBL3481855 0.88 ALDH1A1 (0.32)
SCHEMBL619037 0.85
SCHEMBL8778094 0.81
SCHEMBL3482477 0.80 TSHR (0.35)
SCHEMBL2292470 0.78 TSHR (0.33)
SCHEMBL28729 0.76
SCHEMBL3482195 0.73 TSHR (0.35)
SCHEMBL3482286 0.73 TSHR (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9695095-B2 Process for preparing a catalyst based on a group VIII metal and containing silicon, and a process of selective hydrogenation implementing said catalyst IFP Energies Nouvelles (FR) 2017-07-04 US disclosed
CN-104302399-B Process for preparing a catalyst based on a metal of group VIII and comprising silicon, and selective hydrogenation process using said catalyst IFP 新能源公司 2017-03-22 CN disclosed
US-20150141718-A1 PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON, AND A PROCESS OF SELECTIVE HYDROGENATION IMPLEMENTING SAID CATALYST IFP Energies Nouvelles (FR) 2015-05-21 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
CN-104302399-A Process for preparing a catalyst based on a metal of group VIII and comprising silicon, and selective hydrogenation process using said catalyst IFP Energies Nouvelles 2015-01-21 CN disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed