SCHEMBL3481886

SCHEMBL3481886

Cc1cc(C)cc([SiH2]OC(C)(c2ccccc2)c2ccccc2)c1

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.36
ALDH1A1 P00352 1/20 0.34
ALOX15 P16050 1/20 0.34
TACR1 P25103 1/20 0.33
ESR1 P03372 1/20 0.33
ESR2 Q92731 1/20 0.33
TAAR1 Q96RJ0 1/20 0.31
CNR1 P21554 1/20 0.30
CNR2 P34972 1/20 0.30
LMNA P02545 1/20 0.30
TSHR P16473 1/20 0.30
ALOX12 P18054 1/20 0.30
ACHE P22303 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703381 0.83 MAPK1 (0.43) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL15798273 0.83 MAPK1 (0.43) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL3481716 0.78 KCNN4 (0.31) LMNA
SCHEMBL8639540 0.75 MAPK1 (0.43) MAPK1ALDH1A1ALOX15ESR1ESR2
SCHEMBL3482534 0.74 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL3482489 0.72 TP53 (0.42) MAPK1ALDH1A1ALOX15TAAR1
SCHEMBL3482395 0.72 ALDH1A1 (0.31) ALDH1A1TSHR
SCHEMBL4171312 0.70 MAPK1 (0.46) MAPK1ALDH1A1ALOX15ESR1ESR2
Tert-Butylbenzene SCHEMBL11183915 0.69 TSHR (0.55) MAPK1ALDH1A1ALOX15TACR1ESR1
SCHEMBL23910519 0.69 MAPK1 (0.44) MAPK1ALDH1A1ALOX15ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed