SCHEMBL3482489

SCHEMBL3482489

CCc1ccc([SiH2]OC(C)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.42
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
KIF11 P52732 5/20 0.41
MAPK1 P28482 1/20 0.34
RAB9A P51151 1/20 0.33
TAAR1 Q96RJ0 1/20 0.32
ALDH1A1 P00352 1/20 0.32
ALOX15 P16050 1/20 0.32
LPL P06858 1/20 0.32
LIPG Q9Y5X9 1/20 0.32
PPARG P37231 1/20 0.32
PPARA Q07869 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703381 0.88 MAPK1 (0.43) KMT2AMAPK1TAAR1ALDH1A1ALOX15
SCHEMBL15798273 0.84 MAPK1 (0.43) KMT2AMAPK1TAAR1ALDH1A1ALOX15
SCHEMBL3482153 0.82 TP53 (0.41) TP53MEN1KMT2AKIF11RAB9A
SCHEMBL3482297 0.79 LPL (0.36) TP53MAPK1TAAR1ALDH1A1LPL
SCHEMBL3482167 0.78 LPL (0.39) TP53MAPK1TAAR1ALDH1A1LPL
SCHEMBL3481886 0.72 MAPK1 (0.36) MAPK1TAAR1ALDH1A1ALOX15
SCHEMBL8639540 0.72 MAPK1 (0.43) KMT2AMAPK1TAAR1ALDH1A1ALOX15
SCHEMBL3482550 0.72 LPL (0.43) TP53MAPK1TAAR1ALDH1A1LPL
SCHEMBL703768 0.72 KCNN4 (0.35) MAPK1TAAR1ALDH1A1ALOX15
SCHEMBL4269703 0.71 RIPK1 (0.33) TP53MEN1KMT2AMAPK1TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed