SCHEMBL3481716

SCHEMBL3481716

CCC(O[SiH2]c1cc(C)cc(C)c1)(c1ccccc1)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.31
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703768 0.84 KCNN4 (0.35) KCNN4LMNA
SCHEMBL3481886 0.78 MAPK1 (0.36) LMNA
SCHEMBL3482153 0.77 TP53 (0.41) KCNN4LMNA
SCHEMBL704048 0.73 KCNN4 (0.38) KCNN4LMNA
SCHEMBL706839 0.73 KCNN4 (0.38) KCNN4LMNA
SCHEMBL4281338 0.73 KCNN4 (0.38) KCNN4LMNA
SCHEMBL708048 0.73 KCNN4 (0.34) KCNN4LMNA
SCHEMBL5024578 0.72 TAAR1 (0.38) KCNN4LMNA
SCHEMBL3482395 0.72 ALDH1A1 (0.31)
SCHEMBL4281342 0.72 KCNN4 (0.36) KCNN4LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed