SCHEMBL3481993

SCHEMBL3481993

CCCCCCC(CC)O[SiH3]

nearest known ligand 0.43

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.39
DNM1 Q05193 2/20 0.39
TSHR P16473 1/20 0.38
THRB P10828 1/20 0.38
OPRM1 P35372 1/20 0.37
SMPD1 P17405 3/20 0.36
GPR84 Q9NQS5 3/20 0.35
FDPS P14324 3/20 0.35
SPHK1 Q9NYA1 1/20 0.35
FFAR1 O14842 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9009710 1.00 LMNA (0.39) LMNADNM1TSHRTHRBOPRM1
SCHEMBL8139611 1.00 LMNA (0.39) LMNADNM1TSHRTHRBOPRM1
SCHEMBL15846760 1.00 LMNA (0.39) LMNADNM1TSHRTHRBOPRM1
SCHEMBL27646907 1.00 LMNA (0.39) LMNADNM1TSHRTHRBOPRM1
SCHEMBL2770018 0.98 OPRM1 (0.39) LMNADNM1TSHRTHRBOPRM1
SCHEMBL7056921 0.90 LMNA (0.42) LMNADNM1TSHRTHRBOPRM1
SCHEMBL4766710 0.90 LMNA (0.42) LMNADNM1TSHRTHRBOPRM1
SCHEMBL6057209 0.90 LMNA (0.42) LMNADNM1TSHRTHRBOPRM1
SCHEMBL11207866 0.90 LMNA (0.42) LMNADNM1TSHRTHRBOPRM1
SCHEMBL3796584 0.90 LMNA (0.42) LMNADNM1TSHRTHRBOPRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed