Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.37 |
| ▸ | DNM1 | Q05193 | 2/20 | 0.36 |
| ▸ | TSHR | P16473 | 3/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
| ▸ | CA2 | P00918 | 7/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | CA1 | P00915 | 4/20 | 0.33 |
| ▸ | FDPS | P14324 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27812177 | 0.92 | OPRM1 (0.39) | DNM1TSHRCYP3A4 | |
| SCHEMBL28015957 | 0.90 | GPR84 (0.40) | DNM1TSHRCYP3A4 | |
| SCHEMBL29199615 | 0.90 | GPR84 (0.40) | DNM1TSHRCYP3A4 | |
| SCHEMBL31135122 | 0.84 | DNM1 (0.42) | DNM1CYP3A4CA2 | |
| SCHEMBL6737764 | 0.79 | GPR84 (0.43) | DNM1TSHRCYP3A4 | |
| SCHEMBL4247123 | 0.79 | GPR84 (0.43) | DNM1TSHRCYP3A4 | |
| SCHEMBL10877482 | 0.76 | — | — | |
| SCHEMBL31135148 | 0.75 | GPR84 (0.40) | DNM1TSHRCYP3A4 | |
| SCHEMBL11350285 | 0.74 | CSNK1E (0.47) | — | |
| SCHEMBL8050675 | 0.73 | TSHR (0.46) | ALDH1A1TDP1DNM1TSHRCYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-1999167-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | Novolen Technology Holdings, C.V. (NL) | 2008-12-10 | — | — | EP | disclosed |
| WO-2007106348-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | NOVOLEN TECHNOLOGY HOLDINGS C.V. (NL) | 2007-09-20 | — | — | WO | disclosed |
| US-20070213204-A1 | Ziegler-Natta catalyst with in situ-generated donor | NOVOLEN TECHNOLOGY HOLDINGS C.V. | 2007-09-13 | — | — | US | disclosed |
| US-3987061-A | METAL COMPLEXING AGENTS | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1976-10-19 | — | — | US | disclosed |