SCHEMBL3482052

SCHEMBL3482052

O[SiH](Cc1ccccc1)[SiH2][SiH3]

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.39
CALM1 P0DP23 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
IDO1 P14902 2/20 0.34
THRB P10828 1/20 0.34
CES2 O00748 1/20 0.34
CES1 P23141 1/20 0.34
AKR1B1 P15121 1/20 0.34
ALDH1A1 P00352 2/20 0.33
TP53 P04637 1/20 0.33
LOXL2 Q9Y4K0 1/20 0.33
TRPA1 O75762 1/20 0.33
NOS1 P29475 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
KEAP1 Q14145 1/20 0.32
MAOB P27338 1/20 0.32
HPGD P15428 1/20 0.32
ALOX15 P16050 1/20 0.32
ALOX12 P18054 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22630854 0.78 TDP1 (0.43) TSHRTDP1ALDH1A1LOXL2NOS1
SCHEMBL8380742 0.76 TSHR (0.42) TSHRCALM1TDP1IDO1THRB
SCHEMBL3482200 0.73 TSHR (0.43) TSHRCALM1TDP1IDO1THRB
SCHEMBL8382284 0.73 IDO1 (0.39) TSHRCALM1TDP1IDO1ALDH1A1
SCHEMBL819896 0.72 TSHR (0.48) TSHRCALM1TDP1IDO1THRB
SCHEMBL3237076 0.72 TSHR (0.48) TSHRCALM1TDP1IDO1THRB
Phosphonic Acid SCHEMBL1162610 0.71 KEAP1 (0.37) TSHRTDP1ALDH1A1LOXL2NOS1
SCHEMBL15302282 0.69 TSHR (0.43) TSHRCALM1TDP1IDO1THRB
SCHEMBL5016153 0.68 TSHR (0.39) TSHRCALM1TDP1IDO1THRB
SCHEMBL676743 0.68 TSHR (0.39) TSHRCALM1TDP1IDO1THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed