Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | NOS3 | P29474 | 1/20 | 0.30 |
| ▸ | NOS2 | P35228 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13027895 | 0.95 | NOS3 (0.30) | NOS3NOS2 | |
| SCHEMBL315824 | 0.85 | — | — | |
| SCHEMBL13027179 | 0.84 | ALDH1A1 (0.36) | ALDH1A1 | |
| SCHEMBL27622805 | 0.82 | — | — | |
| SCHEMBL3482484 | 0.82 | NOS3 (0.31) | NOS3NOS2 | |
| SCHEMBL9723794 | 0.81 | ALDH1A1 (0.41) | ALDH1A1TSHRNOS3NOS2 | |
| SCHEMBL13027744 | 0.81 | — | — | |
| SCHEMBL28429409 | 0.79 | KDM4E (0.33) | ALDH1A1TSHR | |
| SCHEMBL3482917 | 0.79 | MEN1 (0.31) | ALDH1A1TSHR | |
| SCHEMBL3482537 | 0.79 | MEN1 (0.31) | ALDH1A1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114560790-A | Biphenyl-2-nitrile compound and preparation method thereof | 赣南师范大学 | 2022-05-31 | — | — | CN | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| CN-101641767-B | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | FUJITSU LTD | 2013-10-30 | — | — | CN | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |