SCHEMBL3482537

SCHEMBL3482537

CCO[Si](C)(C)c1cc(C)cc(C)c1

nearest known ligand 0.31

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.31
RECQL P46063 1/20 0.31
KMT2A Q03164 1/20 0.31
HSD17B10 Q99714 1/20 0.31
ALDH1A1 P00352 1/20 0.31
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20536610 0.85 ALDH1A1 (0.34) ALDH1A1
SCHEMBL3482397 0.83
SCHEMBL3482917 0.82 MEN1 (0.31) MEN1RECQLKMT2AHSD17B10ALDH1A1
SCHEMBL20503695 0.80 KDM4E (0.32) MEN1KMT2AHSD17B10ALDH1A1TSHR
SCHEMBL3482069 0.79 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL6745118 0.78
SCHEMBL3481807 0.77 ACHE (0.36) MEN1KMT2AHSD17B10ALDH1A1TSHR
SCHEMBL15733836 0.76 IDO1 (0.31)
SCHEMBL28100384 0.75 ALDH1A1 (0.36) MEN1RECQLKMT2AHSD17B10ALDH1A1
SCHEMBL704583 0.75 NQO1 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed