SCHEMBL3481513

SCHEMBL3481513

CCC[SiH2]OCCC(c1ccccc1)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 7/20 0.40
HTR2A P28223 6/20 0.40
CYP3A4 P08684 2/20 0.40
HTT P42858 2/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
MEN1 O00255 1/20 0.40
ALDH1A1 P00352 1/20 0.40
ALOX15 P16050 1/20 0.40
ALOX12 P18054 1/20 0.40
KMT2A Q03164 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
GPR55 Q9Y2T6 1/20 0.40
SIGMAR1 Q99720 1/20 0.40
AOC3 Q16853 2/20 0.38
TDP1 Q9NUW8 1/20 0.37
LMNA P02545 3/20 0.37
CHRM2 P08172 1/20 0.37
HTR1A P08908 1/20 0.37
ADRA2A P08913 1/20 0.37
ADORA3 P0DMS8 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481390 0.90 SIGMAR1 (0.41) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL704049 0.89 HRH1 (0.45) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL702334 0.86 HRH1 (0.40) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL704101 0.85 HRH1 (0.44) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL707300 0.85 HRH1 (0.44) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL702750 0.83 SIGMAR1 (0.41) HRH1HTR2ACYP3A4SIGMAR1AOC3
SCHEMBL3482136 0.81 TDP1 (0.39) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL706840 0.81 HRH1 (0.45) HRH1HTR2ACYP3A4HTTSMN1; SMN2
Hydrochloric Acid SCHEMBL6521685 0.78 HRH1 (0.54) HRH1HTR2ACYP3A4HTTSMN1; SMN2
SCHEMBL705237 0.78 HRH1 (0.42) HRH1HTR2ACYP3A4HTTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed