SCHEMBL3482189

SCHEMBL3482189

CCCCC=C(CCCC)CO[SiH3]

nearest known ligand 0.31

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
EP300 Q09472 1/20 0.31
TSHR P16473 2/20 0.30
ALDH1A1 P00352 1/20 0.30
CES2 O00748 1/20 0.30
CES1 P23141 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL38749 0.80 ALDH1A1 (0.39) EP300TSHRALDH1A1CES2CES1
SCHEMBL3482780 0.79 BACE1 (0.32)
SCHEMBL28088662 0.78 ALDH1A1 (0.38) EP300TSHRALDH1A1CES2CES1
SCHEMBL29579491 0.78 ALDH1A1 (0.38) EP300TSHRALDH1A1CES2CES1
SCHEMBL3482146 0.78 CES2 (0.31) CES2CES1
SCHEMBL27563971 0.74 EP300 (0.43) EP300TSHRALDH1A1CES2CES1
SCHEMBL9230921 0.73 CES2 (0.42) EP300CES2CES1
SCHEMBL5683456 0.72 BACE1 (0.41)
SCHEMBL29284253 0.72 TSHR (0.39) EP300TSHRALDH1A1CES2CES1
Potassium Fluoride SCHEMBL27879454 0.72 TSHR (0.33) EP300TSHRALDH1A1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed