SCHEMBL706328

SCHEMBL706328

CCC(CC)(CCCO[SiH3])c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 2/20 0.36
KCNN4 O15554 1/20 0.33
KIF11 P52732 6/20 0.33
MAPK1 P28482 1/20 0.32
CHRM2 P08172 1/20 0.32
CHRM1 P11229 1/20 0.32
CHRM3 P20309 1/20 0.32
KCNH2 Q12809 1/20 0.32
CYP3A4 P08684 2/20 0.31
CYP2D6 P10635 2/20 0.31
LTA4H P09960 1/20 0.31
LMNA P02545 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP2C9 P11712 1/20 0.31
TSHR P16473 1/20 0.31
NFKB1 P19838 1/20 0.31
CYP2C19 P33261 1/20 0.31
SCN1A P35498 1/20 0.31
MTOR P42345 1/20 0.31
RAB9A P51151 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706645 0.89 KCNN4 (0.35) SIGMAR1KCNN4KIF11MAPK1CHRM2
SCHEMBL702996 0.88 LTA4H (0.37) SIGMAR1KCNN4KIF11CYP3A4CYP2D6
SCHEMBL706396 0.88 SCN1A (0.35) SIGMAR1KCNN4KIF11MAPK1KCNH2
SCHEMBL3482216 0.85 LTA4H (0.35) SIGMAR1KCNN4KIF11CYP3A4CYP2D6
SCHEMBL3482253 0.81 SCN1A (0.35) SIGMAR1KCNN4KIF11MAPK1CHRM2
SCHEMBL708789 0.81 LTA4H (0.37) SIGMAR1KCNN4KIF11CYP3A4CYP2D6
SCHEMBL3481837 0.79 KIF11 (0.35) SIGMAR1KCNN4KIF11LTA4H
SCHEMBL703821 0.79 MAPK1 (0.36) SIGMAR1KIF11MAPK1KCNH2LMNA
SCHEMBL705749 0.77 KIF11 (0.55) SIGMAR1KIF11KCNH2CYP3A4CYP2D6
SCHEMBL704242 0.77 KCNN4 (0.38) SIGMAR1KCNN4KIF11MAPK1CHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed