SCHEMBL3482376

SCHEMBL3482376

CCc1ccc([Si](C)(Cl)Cl)cc1

nearest known ligand 0.46

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.46
L3MBTL1 Q9Y468 2/20 0.46
TSHR P16473 1/20 0.46
MAPK1 P28482 1/20 0.46
ATM Q13315 1/20 0.46
TP53 P04637 2/20 0.42
TAAR1 Q96RJ0 1/20 0.41
POLB P06746 1/20 0.41
PLAU P00749 1/20 0.40
CYP2A6 P11509 1/20 0.39
LPL P06858 1/20 0.39
LIPG Q9Y5X9 1/20 0.39
MGLL Q99685 1/20 0.39
ALDH1A1 P00352 1/20 0.38
CA2 P00918 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
NOTUM Q6P988 1/20 0.36
LMNA P02545 1/20 0.35
METAP2 P50579 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482281 0.85 TP53 (0.42) TDP1L3MBTL1TSHRMAPK1ATM
SCHEMBL3481645 0.82 TP53 (0.43) TDP1L3MBTL1TSHRMAPK1ATM
SCHEMBL8377567 0.81 LPL (0.43) L3MBTL1POLBLPLLIPGMGLL
SCHEMBL703791 0.81 ALDH1A1 (0.36) ALDH1A1
SCHEMBL10814635 0.80 CA1 (0.37) CA2
SCHEMBL8306401 0.79 TP53 (0.46) TDP1L3MBTL1TSHRMAPK1ATM
SCHEMBL13480710 0.79 TP53 (0.46) TDP1L3MBTL1TSHRMAPK1ATM
SCHEMBL8382588 0.78 TP53 (0.40) TDP1L3MBTL1TSHRMAPK1ATM
SCHEMBL8383158 0.78 CA2 (0.47) TP53LPLLIPGALDH1A1CA2
SCHEMBL10319292 0.78 TP53 (0.52) TDP1L3MBTL1TSHRMAPK1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-0905172-A1 POLYSILANES AND POSITIVE HOLE TRANSPORTING MATERIALS OSAKA GAS CO., LTD. (JP) 1999-03-31 EP disclosed
EP-0905567-A1 HOLE TRANSPORTING MATERIAL OSAKA GAS CO., LTD. (JP) 1999-03-31 EP disclosed