SCHEMBL3482385

SCHEMBL3482385

Cc1cc(C)cc([Si](C)(O)O)c1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.43
TSHR P16473 1/20 0.38
TPMT P51580 1/20 0.36
ACHE P22303 2/20 0.35
SELL P14151 1/20 0.35
SELP P16109 1/20 0.35
SELE P16581 1/20 0.35
PRSS1 P07477 1/20 0.35
PRSS2 P07478 1/20 0.35
C1S P09871 1/20 0.35
PRSS3 P35030 1/20 0.35
KDM4E B2RXH2 1/20 0.33
LMNA P02545 1/20 0.33
GAA P10253 1/20 0.33
MAPT P10636 1/20 0.33
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA3 P07451 1/20 0.31
CA4 P22748 1/20 0.31
CA6 P23280 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482151 0.82 ALDH1A1 (0.43) ALDH1A1TSHRTPMTACHESELL
SCHEMBL26567655 0.81 ALDH1A1 (0.42) ALDH1A1TSHRTPMTACHESELL
SCHEMBL1686867 0.79 ALDH1A1 (0.45) ALDH1A1TSHRTPMTACHESELL
SCHEMBL1686493 0.79 ALDH1A1 (0.45) ALDH1A1TSHRTPMTACHESELL
SCHEMBL3696579 0.75 ALDH1A1 (0.42) ALDH1A1TSHRTPMTACHESELL
SCHEMBL9463327 0.75 ALDH1A1 (0.42) ALDH1A1TSHRTPMTACHESELL
SCHEMBL1317229 0.71 ALDH1A1 (0.38) ALDH1A1TSHRTPMTACHENOTUM
SCHEMBL3482179 0.71 ALDH1A1 (0.43) ALDH1A1TSHRTPMTACHENOTUM
SCHEMBL1316127 0.71 ALDH1A1 (0.38) ALDH1A1TSHRTPMTACHENOTUM
SCHEMBL15445504 0.71 ACHE (0.47) ALDH1A1TSHRACHELMNAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed