SCHEMBL3482405

SCHEMBL3482405

CCc1ccc([Si](C)(C)O)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.44
LIPG Q9Y5X9 1/20 0.44
ALDH1A1 P00352 1/20 0.43
TP53 P04637 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.41
TAAR1 Q96RJ0 1/20 0.41
PLAU P00749 1/20 0.40
CYP2A6 P11509 1/20 0.39
TRPA1 O75762 1/20 0.39
IDO1 P14902 2/20 0.39
PLK1 P53350 1/20 0.39
NR1I2 O75469 2/20 0.39
EGFR P00533 1/20 0.38
RAB9A P51151 1/20 0.37
CA2 P00918 1/20 0.37
TSHR P16473 1/20 0.37
MAPK1 P28482 1/20 0.37
ATM Q13315 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482037 0.85 LPL (0.44) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL1686679 0.82 CYP2A6 (0.46) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL3482401 0.82 LPL (0.46) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL235602 0.81 NR1I2 (0.43) NR1I2
SCHEMBL8306401 0.79 TP53 (0.46) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL13480710 0.79 TP53 (0.46) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL15981407 0.78 ABAT (0.48) SMN1; SMN2TAAR1
SCHEMBL7902561 0.78 NR1I2 (0.42) NR1I2
SCHEMBL14579977 0.76 TP53 (0.48) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL3482376 0.75 TDP1 (0.46) LPLLIPGALDH1A1TP53SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed