Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES1 | P23141 | 3/20 | 0.38 |
| ▸ | CES2 | O00748 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.35 |
| ▸ | TP53 | P04637 | 1/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.30 |
| ▸ | HSD17B3 | P37058 | 1/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481938 | 0.83 | CES2 (0.32) | CES1CES2 | |
| SCHEMBL15303920 | 0.77 | CES1 (0.36) | CES1CES2ALDH1A1TP53CA1 | |
| SCHEMBL15303885 | 0.77 | CES1 (0.36) | CES1CES2ALDH1A1TP53CA1 | |
| SCHEMBL2273375 | 0.77 | ALDH1A1 (0.44) | CES1CES2ALDH1A1TP53CA1 | |
| SCHEMBL2274207 | 0.73 | CES1 (0.33) | CES1CES2ALDH1A1TP53CA1 | |
| SCHEMBL704775 | 0.73 | ALDH1A1 (0.38) | CES1CES2ALDH1A1TP53CA1 | |
| SCHEMBL705617 | 0.72 | ALDH1A1 (0.32) | CES1CES2ALDH1A1TP53 | |
| SCHEMBL2272482 | 0.72 | ALDH1A1 (0.32) | CES1CES2ALDH1A1TP53 | |
| SCHEMBL6114149 | 0.71 | — | — | |
| SCHEMBL8968327 | 0.71 | CES1 (0.45) | CES1CES2ALDH1A1TP53CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |