SCHEMBL3482527

SCHEMBL3482527

Cc1ccc([Si](O)([SiH3])c2ccccc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 3/20 0.43
LMNA P02545 2/20 0.43
TSHR P16473 1/20 0.43
ALOX12 P18054 1/20 0.43
ESR1 P03372 1/20 0.40
ESR2 Q92731 1/20 0.40
CES2 O00748 1/20 0.40
CES1 P23141 1/20 0.40
HPGD P15428 4/20 0.38
NPC1 O15118 4/20 0.36
RAB9A P51151 4/20 0.36
TDP1 Q9NUW8 3/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
POLB P06746 2/20 0.36
NFKB1 P19838 1/20 0.36
NFKB2 Q00653 1/20 0.36
RELA Q04206 1/20 0.36
NR1H2 P55055 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2456201 0.85 ESR1 (0.39) TSHRESR1ESR2CES2CES1
SCHEMBL8575046 0.81 ACHE (0.48) ACHELMNATSHRALOX12ESR1
SCHEMBL3482227 0.81 ACHE (0.48) ACHELMNATSHRALOX12ESR1
SCHEMBL12124343 0.78 ACHE (0.50) ACHELMNATSHRALOX12ESR1
SCHEMBL12124325 0.78 ACHE (0.50) ACHELMNATSHRALOX12ESR1
SCHEMBL14883330 0.75 ACHE (0.53) ACHELMNATSHRALOX12ESR1
SCHEMBL12124367 0.75 LMNA (0.53) ACHELMNATSHRALOX12ESR1
SCHEMBL2454173 0.75 LMNA (0.53) ACHELMNATSHRALOX12ESR1
SCHEMBL987143 0.75 LMNA (0.53) ACHELMNATSHRALOX12ESR1
SCHEMBL7265559 0.75 LMNA (0.53) ACHELMNATSHRALOX12ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed