SCHEMBL3482548

SCHEMBL3482548

Cc1ccc(C(O[SiH3])c2ccccc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.43
KMT2A Q03164 2/20 0.43
NPSR1 Q6W5P4 2/20 0.43
KDM4E B2RXH2 1/20 0.43
LMNA P02545 3/20 0.42
TSHR P16473 2/20 0.42
ALOX12 P18054 1/20 0.42
ACHE P22303 1/20 0.42
CHRNA7 P36544 2/20 0.41
IDO1 P14902 3/20 0.39
TDO2 P48775 3/20 0.39
MLKL Q8NB16 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.38
SCN1A P35498 2/20 0.37
SCN2A Q99250 2/20 0.37
SCN3A Q9NY46 2/20 0.37
CYP1A2 P05177 1/20 0.37
CHRM2 P08172 1/20 0.37
CHRM4 P08173 1/20 0.37
CHRM5 P08912 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5168139 0.91 CHRNA7 (0.42) MEN1KMT2ANPSR1KDM4EACHE
SCHEMBL675765 0.86 IDO1 (0.43) KDM4ELMNATSHRIDO1TDO2
SCHEMBL11500414 0.82 LMNA (0.46) MEN1KMT2ANPSR1KDM4ELMNA
SCHEMBL13697238 0.80 MLKL (0.51) MEN1KMT2ANPSR1KDM4ELMNA
SCHEMBL11781680 0.78 KDM4E (0.46) MEN1KMT2ANPSR1KDM4ELMNA
SCHEMBL14380217 0.78 MEN1 (0.43) MEN1KMT2ANPSR1KDM4ELMNA
SCHEMBL98113 0.78 IDO1 (0.64) IDO1TDO2
SCHEMBL8335144 0.77 MEN1 (0.45) MEN1KMT2ANPSR1KDM4ELMNA
SCHEMBL4668992 0.77 SCN1A (0.58) MEN1KMT2ANPSR1KDM4ELMNA
SCHEMBL1838501 0.75 LMNA (0.51) MEN1KMT2ANPSR1KDM4ELMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed