SCHEMBL3482566

SCHEMBL3482566

CCCCCC(CC)(CC)O[SiH3]

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.35
THRB P10828 1/20 0.35
FDPS P14324 11/20 0.33
GGPS1 O95749 7/20 0.33
SMPD1 P17405 4/20 0.33
CES2 O00748 1/20 0.31
LPAR1 Q92633 1/20 0.31
LPAR3 Q9UBY5 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23930358 0.97 TSHR (0.40) TSHRTHRBFDPSGGPS1SMPD1
SCHEMBL29012022 0.97 TSHR (0.40) TSHRTHRBFDPSGGPS1SMPD1
SCHEMBL28431829 0.97 TSHR (0.40) TSHRTHRBFDPSGGPS1SMPD1
SCHEMBL6303628 0.97 TSHR (0.40) TSHRTHRBFDPSGGPS1SMPD1
Methylamine SCHEMBL201477 0.95 FDPS (0.34) TSHRTHRBFDPSGGPS1SMPD1
SCHEMBL3481794 0.95 LMNA (0.30) TSHR
SCHEMBL3481448 0.90 LMNA (0.30) TSHR
SCHEMBL613245 0.89 TSHR (0.39) TSHRTHRBFDPSGGPS1SMPD1
SCHEMBL2120675 0.86 TSHR (0.44) TSHRTHRBFDPSGGPS1SMPD1
SCHEMBL6057116 0.86 TSHR (0.44) TSHRTHRBFDPSGGPS1SMPD1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117177782-A Polymer capable of being thermally crosslinked to form elastic material, and preparation method and application thereof 杭州新聚医疗科技有限公司 2023-12-05 CN disclosed
CN-117062848-A Polymer for forming elastic material by thermal crosslinking for foldable intraocular lens, preparation method and application thereof 杭州新聚医疗科技有限公司 2023-11-14 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed