SCHEMBL3481675

SCHEMBL3481675

CCCC(C)c1ccccc1[SiH2]Cl

nearest known ligand 0.37

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.34
FFAR1 O14842 1/20 0.31
GPR84 Q9NQS5 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482610 0.89 TSHR (0.35) TSHR
SCHEMBL2269777 0.85 TSHR (0.53) TSHR
SCHEMBL3481403 0.81 TSHR (0.41) TSHRSMN1; SMN2FFAR1GPR84
SCHEMBL31380293 0.80 TSHR (0.48) TSHRSMN1; SMN2FFAR1GPR84
SCHEMBL705420 0.76 GABRA1 (0.44) TSHRSMN1; SMN2
SCHEMBL9284882 0.75 ADRB2 (0.44) TSHRSMN1; SMN2
SCHEMBL780254 0.75 TSHR (0.41) TSHRSMN1; SMN2
SCHEMBL9232403 0.75 ADRB2 (0.44) TSHRSMN1; SMN2
SCHEMBL14864537 0.74 TSHR (0.43) TSHRSMN1; SMN2FFAR1GPR84
SCHEMBL2697157 0.72 TSHR (0.42) TSHRSMN1; SMN2FFAR1GPR84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed