SCHEMBL3482687

SCHEMBL3482687

FC[Si](OF)(c1ccccc1)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 2/20 0.33
NR1H3 Q13133 2/20 0.33
ALDH1A1 P00352 1/20 0.30
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15091606 0.68 NR1H2 (0.33) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL1049841 0.63 ALDH1A1 (0.41) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL1053231 0.63 ALDH1A1 (0.41) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL1051334 0.63 ALDH1A1 (0.41) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL7737242 0.61 NR1H2 (0.32) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL10607287 0.60
SCHEMBL509827 0.60 NR1H2 (0.33) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL25284860 0.60 MAPT (0.44) NR1H2NR1H3TSHR
SCHEMBL23701389 0.60 ALDH1A1 (0.38) NR1H2NR1H3ALDH1A1TSHR
SCHEMBL21438997 0.60 TSHR (0.38) NR1H2NR1H3ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-0452725-B1 Fluorine containing diaminobenzene derivatives and its use SAGAMI CHEM RES (JP) 1995-11-08 EP disclosed
EP-0635533-A1 Polyimide-based liquid crystal aligning agent SAGAMI CHEMICAL RESEARCH CENTER (JP) 1995-01-25 EP disclosed
US-5153304-A Polyimides; liquid crystal tilting agent; water-repelling SAGAMI CHEMICAL RESEARCH CENTER (JP) 1992-10-06 US disclosed
US-5144078-A Polyimide intermediates SAGAMI CHEMICAL RESEARCH CENTER (JP) 1992-09-01 US disclosed
US-5140087-A Endcapped by a polyfluoroalkylsilanol at one end and a silanol at the other; molecular weight distribution; silicone rubbers; oil repellants CHISSO CORPORATION (JP) 1992-08-18 US disclosed
EP-0452725-A2 Fluorine containing diaminobenzene derivatives and its use SAGAMI CHEMICAL RESEARCH CENTER (JP) 1991-10-23 EP disclosed
US-5047491-A Molding materials; waterproofing, oil repellents, antifouling agents CHISSO CORPORATION (JP) 1991-09-10 US disclosed
US-4996280-A Polyorganosiloxane compounds with amino group CHISSO CORPORATION (JP) 1991-02-26 US disclosed
US-4992521-A Oil and water repellency, stain and heat resistance, release properties CHISSO CORPORATION (JP) 1991-02-12 US disclosed
US-4987203-A Modifier of properties of epoxy resins, polyamides or polyurethanes CHISSO CORPORATION (JP) 1991-01-22 US disclosed
EP-0355497-A2 Polyorganosiloxane compounds Chisso Corporation (JP) 1990-02-28 EP disclosed
EP-0353709-A2 Polyorganosiloxane compounds with amino group Chisso Corporation (JP) 1990-02-07 EP disclosed
EP-0338577-A2 Organosiloxane and process for preparing the same Chisso Corporation (JP) 1989-10-25 EP disclosed