Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.40 |
| ▸ | CA1 | P00915 | 1/20 | 0.39 |
| ▸ | CA2 | P00918 | 1/20 | 0.39 |
| ▸ | CA9 | Q16790 | 1/20 | 0.39 |
| ▸ | IDO1 | P14902 | 1/20 | 0.38 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.38 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.37 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.37 |
| ▸ | CASP1 | P29466 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.37 |
| ▸ | TAAR1 | Q96RJ0 | 2/20 | 0.36 |
| ▸ | ATM | Q13315 | 1/20 | 0.36 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.36 |
| ▸ | HTR1A | P08908 | 1/20 | 0.36 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481879 | 0.93 | TDP1 (0.38) | TDP1CA1CA2CA9IDO1 | |
| SCHEMBL705824 | 0.89 | SIGMAR1 (0.43) | TDP1IDO1SIGMAR1NPC1RAB9A | |
| SCHEMBL708505 | 0.89 | IDO1 (0.48) | IDO1SIGMAR1CHRM2HTR1AADRA2A | |
| SCHEMBL706398 | 0.87 | SIGMAR1 (0.44) | TDP1IDO1SIGMAR1CHRM2HTR1A | |
| SCHEMBL704244 | 0.84 | TDP1 (0.43) | TDP1CA1CA2CA9IDO1 | |
| SCHEMBL3482728 | 0.83 | CA1 (0.38) | TDP1CA1CA2CA9IDO1 | |
| SCHEMBL3481843 | 0.82 | SIGMAR1 (0.41) | IDO1SIGMAR1NPC1RAB9ACHRM2 | |
| SCHEMBL3482264 | 0.82 | IDO1 (0.46) | IDO1SIGMAR1CHRM2HTR1AADRA2A | |
| SCHEMBL19809152 | 0.81 | CA1 (0.37) | TDP1CA1CA2CA9IDO1 | |
| SCHEMBL19809164 | 0.80 | CA1 (0.36) | TDP1CA1CA2CA9IDO1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | claimed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | claimed |
| WO-2024176969-A1 | METHOD FOR PRODUCING CARBONIC ACID DIESTER | 国立研究開発法人産業技術総合研究所 | 2024-08-29 | — | — | WO | disclosed |
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | disclosed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | disclosed |
| CN-114085382-A | Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof | 铨盛聚碳科技股份有限公司 | 2022-02-25 | — | — | CN | disclosed |
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |