SCHEMBL3483559

SCHEMBL3483559

CC(ONc1ccccc1)[Si](Cl)(Cl)Cl

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 4/20 0.40
ALDH1A1 P00352 5/20 0.35
HSD17B10 Q99714 5/20 0.35
TSHR P16473 4/20 0.35
ALOX15 P16050 2/20 0.35
ALOX12 P18054 2/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
LMNA P02545 1/20 0.35
CYP3A4 P08684 1/20 0.35
THRB P10828 1/20 0.35
RECQL P46063 1/20 0.35
ATM Q13315 1/20 0.35
GAA P10253 4/20 0.35
KCNH3 Q9ULD8 3/20 0.35
SMN1; SMN2 Q16637 2/20 0.33
HPGD P15428 1/20 0.33
KDM4E B2RXH2 1/20 0.33
CTSD P07339 1/20 0.32
MEN1 O00255 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11065415 0.77 TDP1 (0.44) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL2255542 0.76 TDP1 (0.48) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL10697600 0.72 TDP1 (0.44) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL10583869 0.71 TDP1 (0.43) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL2257955 0.69 TDP1 (0.41) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL4721887 0.68 ALDH1A1 (0.36) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL809522 0.68 TDP1 (0.40) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL14292863 0.68 ALDH1A1 (0.40) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL941713 0.68 ALDH1A1 (0.40) TDP1ALDH1A1HSD17B10TSHRALOX15
SCHEMBL812821 0.68 TDP1 (0.40) TDP1ALDH1A1HSD17B10TSHRALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed