Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL414438 | 0.96 | — | — | |
| Ammonia Solution, Strong SCHEMBL15536302 | 0.92 | — | — | |
| Hydrochloric Acid SCHEMBL7910946 | 0.92 | — | — | |
| Iodide SCHEMBL27937497 | 0.92 | — | — | |
| Hydrochloric Acid SCHEMBL234179 | 0.92 | — | — | |
| Bromide SCHEMBL25430335 | 0.92 | — | — | |
| Hydrochloric Acid SCHEMBL418025 | 0.89 | — | — | |
| Bromide SCHEMBL11230778 | 0.89 | — | — | |
| Iodide SCHEMBL27937504 | 0.89 | — | — | |
| Iodide SCHEMBL27937507 | 0.86 | MEN1 (0.37) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| EP-1621927-B1 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160187780-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9316912-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| EP-1645908-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-04-12 | — | — | EP | disclosed |
| EP-1621927-A2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | Fuji Photo Film Co., Ltd. (JP) | 2006-02-01 | — | — | EP | disclosed |
| US-20060008736-A1 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJI PHOTO FILM CO., LTD. | 2006-01-12 | — | — | US | disclosed |
| EP-1612602-A2 | Photosensitive composition and method for forming pattern using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-01-04 | — | — | EP | disclosed |
| US-20050287473-A1 | Photosensitive composition and method for forming pattern using the same | FUJI PHOTO FILM CO., LTD. | 2005-12-29 | — | — | US | disclosed |
| EP-1580598-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | Fuji Photo Film Co. Ltd. (JP) | 2005-09-28 | — | — | EP | disclosed |
| US-20050208419-A1 | Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2005-09-22 | — | — | US | disclosed |
| US-20050186505-A1 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |
| US-20050186503-A1 | Resist composition for immersion exposure and pattern formation method using the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |
| EP-1566693-A2 | Resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2005-08-24 | — | — | EP | disclosed |