SCHEMBL36092

SCHEMBL36092

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)c2ccc(C)cc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 2/20 0.48
CA1 P00915 3/20 0.45
CA2 P00918 3/20 0.45
MMP1 P03956 1/20 0.45
MMP2 P08253 1/20 0.45
MMP9 P14780 1/20 0.45
MMP8 P22894 1/20 0.45
MMP13 P45452 1/20 0.45
CA12 O43570 1/20 0.45
CA3 P07451 1/20 0.45
CA6 P23280 1/20 0.45
CA5A P35218 1/20 0.45
CA7 P43166 1/20 0.45
CA9 Q16790 1/20 0.45
CA5B Q9Y2D0 1/20 0.45
TLR9 Q9NR96 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.42
F2 P00734 1/20 0.41
PRSS1 P07477 1/20 0.41
PRSS2 P07478 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8072003 0.94 GAA (0.43) GAACA1CA2MMP1MMP2
SCHEMBL28293012 0.93 TLR9 (0.42) GAACA1CA2MMP1MMP2
SCHEMBL21838871 0.93 MAPT (0.47) GAACA1CA2MMP1MMP2
SCHEMBL14600187 0.93 MAPT (0.47) GAACA1CA2MMP1MMP2
SCHEMBL14650732 0.91 MAPT (0.48) GAACA1CA2CA12CA3
SCHEMBL60930 0.90 GAA (0.43) GAACA1CA2MMP1MMP2
SCHEMBL28254137 0.88 TLR9 (0.39) GAACA1CA2MMP1MMP2
SCHEMBL6105523 0.88 MAPT (0.44) GAACA1CA2CA12CA9
SCHEMBL3207137 0.87 ALDH1A1 (0.42) GAACA1CA2MMP1MMP2
SCHEMBL7688694 0.85 CA2 (0.42) GAACA1CA2MMP1MMP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 4668 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121873631-B Spin-on carbon composition, semiconductor preparation method and semiconductor device Jiageng Innovation Laboratory (CN) 2026-05-26 CN claimed
CN-122011922-A Bottom anti-reflection coating composition and preparation and application thereof 嘉庚创新实验室 2026-05-12 CN claimed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
CN-119998727-A Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance YC化学制品株式会社 2025-05-13 CN claimed
CN-114153124-B Composition for ArF immersed photoresist top layer coating and preparation method thereof 中节能万润股份有限公司 2025-04-22 CN claimed
CN-119165732-B Photoresist bottom anti-reflection coating polymer, preparation method, composition and application 中节能万润股份有限公司 2025-01-28 CN claimed
US-20250021002-A1 BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) 2025-01-16 US claimed
CN-119165732-A Photoresist bottom anti-reflection coating polymer, preparation method, composition and application 中节能万润股份有限公司 2024-12-20 CN claimed
CN-118684824-A Positive chemical amplification photoresist resin, preparation method and photoresist 万华化学集团股份有限公司 2024-09-24 CN claimed
US-6660447-B2 Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-09 US claimed
US-6436606-B1 POLYMERS AND PHOTORESISTS COATING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-20 US claimed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP claimed
US-6165677-A Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-12-26 US claimed
US-6033826-A POLYHYDROXYSTYRENE DERIVATIVE CONTAINING AN ACETAL OR KETAL GROUP WHICH CAN EASILY BE ELIMINATED IN THE PRESENCE OF AN ACID IN THE MOLECULE AND HAVING A VERY NARROW MOLECULAR WEIGHT DISTRIBUTION GIVES A RESIST MATERIAL WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-07 US claimed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
US-5916728-A RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1999-06-29 US claimed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US claimed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP claimed
US-5338641-A Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-16 US claimed