Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA | P10253 | 2/20 | 0.43 |
| ▸ | CA1 | P00915 | 3/20 | 0.41 |
| ▸ | CA2 | P00918 | 3/20 | 0.41 |
| ▸ | MMP1 | P03956 | 1/20 | 0.41 |
| ▸ | MMP2 | P08253 | 1/20 | 0.41 |
| ▸ | MMP9 | P14780 | 1/20 | 0.41 |
| ▸ | MMP8 | P22894 | 1/20 | 0.41 |
| ▸ | MMP13 | P45452 | 1/20 | 0.41 |
| ▸ | CA12 | O43570 | 1/20 | 0.41 |
| ▸ | CA3 | P07451 | 1/20 | 0.41 |
| ▸ | CA6 | P23280 | 1/20 | 0.41 |
| ▸ | CA5A | P35218 | 1/20 | 0.41 |
| ▸ | CA7 | P43166 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 1/20 | 0.41 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.41 |
| ▸ | TLR9 | Q9NR96 | 1/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | F2 | P00734 | 1/20 | 0.38 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.38 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36092 | 0.90 | GAA (0.48) | GAACA1CA2MMP1MMP2 | |
| SCHEMBL8072003 | 0.85 | GAA (0.43) | GAACA1CA2MMP1MMP2 | |
| SCHEMBL14600187 | 0.84 | MAPT (0.47) | GAACA1CA2MMP1MMP2 | |
| SCHEMBL21838871 | 0.84 | MAPT (0.47) | GAACA1CA2MMP1MMP2 | |
| SCHEMBL28293012 | 0.84 | TLR9 (0.42) | GAACA1CA2MMP1MMP2 | |
| SCHEMBL3193127 | 0.83 | SMN1; SMN2 (0.40) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL563060 | 0.82 | ALDH1A1 (0.44) | GAASMN1; SMN2ALDH1A1LMNAPOLB | |
| SCHEMBL3207137 | 0.82 | ALDH1A1 (0.42) | GAACA1CA2MMP1MMP2 | |
| SCHEMBL14650732 | 0.82 | MAPT (0.48) | GAACA1CA2CA12CA3 | |
| SCHEMBL7688694 | 0.80 | CA2 (0.42) | GAACA1CA2MMP1MMP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1389 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102939-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-03 | — | — | CN | claimed |
| CN-115873176-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| CN-115873175-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-12 | — | — | CN | claimed |
| WO-2023082371-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | 上海新阳半导体材料股份有限公司 | 2023-05-19 | — | — | WO | claimed |
| CN-116102680-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| CN-116102937-A | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-05-12 | — | — | CN | claimed |
| US-20080174051-A1 | AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY | GLOBALFOUNDRIES INC. (KY) | 2008-07-24 | — | — | US | claimed |
| US-20080169268-A1 | PROCESSES AND MATERIALS FOR STEP AND FLASH IMPRINT LITHOGRAPHY | GLOBALFOUNDRIES INC. (KY) | 2008-07-17 | — | — | US | claimed |
| EP-1938149-A2 | LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS | International Business Machines Corporation (US) | 2008-07-02 | — | — | EP | claimed |
| US-7358029-B2 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-04-15 | — | — | US | claimed |
| US-20070298176-A1 | AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY | GLOBALFOUNDRIES INC. (KY) | 2007-12-27 | — | — | US | claimed |
| US-20070231734-A1 | Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution | GLOBALFOUNDRIES U.S. INC. | 2007-10-04 | — | — | US | claimed |
| US-20070202436-A1 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-30 | — | — | US | claimed |
| WO-2007039346-A2 | LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-04-12 | — | — | WO | claimed |
| US-20070051697-A1 | Processes and materials for step and flash imprint lithography | GLOBALFOUNDRIES INC. (KY) | 2007-03-08 | — | — | US | claimed |
| US-5994022-A | BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID | JSR CORPORATION (JP) | 1999-11-30 | — | — | US | claimed |