SCHEMBL3621707

SCHEMBL3621707

CCOC(OCC)[SiH2]CC[Si](C)(C)C

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.32
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3616744 0.83
SCHEMBL331066 0.80 THRB (0.42) THRBLMNA
SCHEMBL3614311 0.79
SCHEMBL183067 0.78
SCHEMBL6034375 0.77
SCHEMBL3616781 0.76
SCHEMBL3623773 0.76 THRB (0.35) THRBLMNA
SCHEMBL704023 0.75 THRB (0.38) THRBLMNA
SCHEMBL557200 0.75 THRB (0.38) THRBLMNA
SCHEMBL646412 0.75 THRB (0.38) THRBLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10234762-B2 Pattern-forming method JSR CORPORATION (JP) 2019-03-19 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20170003592-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-01-05 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-9116427-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-08-25 US disclosed
US-20130233825-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-09-12 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
US-20130130179-A1 POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-23 US disclosed
WO-2013061601-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 WO disclosed
US-20130107235-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 US disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20100178620-A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed