SCHEMBL366250

SCHEMBL366250

C[Si](C)(C)N([Bi](N([Si](C)(C)C)[Si](C)(C)C)N([Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6675485 0.55
SCHEMBL21873182 0.55
SCHEMBL9184129 0.54
SCHEMBL1503459 0.53
SCHEMBL377532 0.53
SCHEMBL1200901 0.53
SCHEMBL1448891 0.52 ALDH1A1 (0.39)
SCHEMBL21873191 0.50
SCHEMBL21905684 0.50
SCHEMBL21873098 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20050089632-A1 Process for producing oxide films ASM INTERNATIONAL N.V. (NL) 2005-04-28 US claimed
EP-1030855-A4 BISMUTH AMIDE COMPOUNDS AND COMPOSITIONS, AND METHOD OF FORMING BISMUTH-CONTAINING FILMS THEREWITH ADVANCED TECH MATERIALS (US) 2001-03-21 EP claimed
EP-1030855-A1 BISMUTH AMIDE COMPOUNDS AND COMPOSITIONS, AND METHOD OF FORMING BISMUTH-CONTAINING FILMS THEREWITH ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2000-08-30 EP claimed
US-5902639-A LIQUID DELIVERY VAPORIZATION OF A BISMUTH AMIDE SOURCE REAGENT TO FORM A BISMUTH-CONTAINING SOURCE VAPOR, AND DEPOSITION ON THE SUBSTRATE OF BISMUTH FROM THE BISMUTH-CONTAINING SOURCE VAPOR TO FORM THE BISMUTH LAYERBISMUTH-CONTAINING MATERIAL ADVANCED TECHNOLOGY MATERIALS, INC (US) 1999-05-11 US claimed
WO-1998043988-A1 BISMUTH AMIDE COMPOUNDS AND COMPOSITIONS, AND METHOD OF FORMING BISMUTH-CONTAINING FILMS THEREWITH ADVANCED TECHNOLOGY MATERIALS, INC. (US) 1998-10-08 WO claimed
US-20240231224-A9 HALOGEN-AND ALIPHATIC-CONTAINING ORGANOTIN PHOTORESISTS AND METHODS THEREOF LAM RESEARCH CORPORATION 2024-07-11 US disclosed
US-20240192590-A1 APPARATUS AND PROCESS FOR EUV DRY RESIST SENSITIZATION BY GAS PHASE INFUSION OF A SENSITIZER LAM RESEARCH CORPORATION 2024-06-13 US disclosed
US-11988965-B2 Underlayer for photoresist adhesion and dose reduction LAM RESEARCH CORPORATION (US) 2024-05-21 US disclosed
US-20240134274-A1 HALOGEN-AND ALIPHATIC-CONTAINING ORGANOTIN PHOTORESISTS AND METHODS THEREOF LAM RES CORP (US) 2024-04-25 US disclosed
WO-2024064071-A1 BAKE-SENSITIVE UNDERLAYERS TO REDUCE DOSE TO SIZE OF EUV PHOTORESIST LAM RESEARCH CORPORATION (US) 2024-03-28 WO disclosed
WO-2023215136-A1 POST-DEVELOPMENT TREATMENT OF METAL-CONTAINING PHOTORESIST LAM RESEARCH CORPORATION (US) 2023-11-09 WO disclosed
US-20230314946-A1 METHOD OF FORMING PHOTO-SENSITIVE HYBRID FILMS LAM RESEARCH CORPORATION 2023-10-05 US disclosed
US-20130206232-A1 NANOWIRES AND METHODS OF MAKING AND USING BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) 2013-08-15 US disclosed
WO-2012009212-A2 NANOWIRES AND METHODS OF MAKING AND USING BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) 2012-01-19 WO disclosed
US-7618681-B2 Producing bismuth-containing ferroelectric or superconducting films by the Atomic Layer Deposition where a silylamido ligand is used as a source material for the bismuth; e.g. tris(bis(trimethylsilyl)amido)bismuth(III) ASM INTERNATIONAL N.V. (NL) 2009-11-17 US disclosed
US-20050089632-A1 Process for producing oxide films ASM INTERNATIONAL N.V. (NL) 2005-04-28 US disclosed
EP-1030855-A4 BISMUTH AMIDE COMPOUNDS AND COMPOSITIONS, AND METHOD OF FORMING BISMUTH-CONTAINING FILMS THEREWITH ADVANCED TECH MATERIALS (US) 2001-03-21 EP disclosed
EP-1030855-A1 BISMUTH AMIDE COMPOUNDS AND COMPOSITIONS, AND METHOD OF FORMING BISMUTH-CONTAINING FILMS THEREWITH ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2000-08-30 EP disclosed
US-5902639-A LIQUID DELIVERY VAPORIZATION OF A BISMUTH AMIDE SOURCE REAGENT TO FORM A BISMUTH-CONTAINING SOURCE VAPOR, AND DEPOSITION ON THE SUBSTRATE OF BISMUTH FROM THE BISMUTH-CONTAINING SOURCE VAPOR TO FORM THE BISMUTH LAYERBISMUTH-CONTAINING MATERIAL ADVANCED TECHNOLOGY MATERIALS, INC (US) 1999-05-11 US disclosed
WO-1998043988-A1 BISMUTH AMIDE COMPOUNDS AND COMPOSITIONS, AND METHOD OF FORMING BISMUTH-CONTAINING FILMS THEREWITH ADVANCED TECHNOLOGY MATERIALS, INC. (US) 1998-10-08 WO disclosed