SCHEMBL372522

SCHEMBL372522

C=C(C)C(=O)N(C(C)(C)CCCCC)C(C)(C)CCCCC

nearest known ligand 0.39

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CES2 O00748 2/20 0.39
TSHR P16473 2/20 0.38
FDPS P14324 7/20 0.33
GGPS1 O95749 4/20 0.33
THRA P10827 1/20 0.33
THRB P10828 1/20 0.33
MEN1 O00255 1/20 0.33
MAPT P10636 1/20 0.33
KMT2A Q03164 1/20 0.33
ATM Q13315 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bromide SCHEMBL6416514 0.80 CES2 (0.39) CES2TSHRFDPSGGPS1THRA
Hydrochloric Acid SCHEMBL10384082 0.80 CES2 (0.39) CES2TSHRFDPSGGPS1THRA
Iodide SCHEMBL6409615 0.80 CES2 (0.39) CES2TSHRFDPSGGPS1THRA
Bromide SCHEMBL9510259 0.80 CES2 (0.39) CES2TSHRFDPSGGPS1THRA
Hydrochloric Acid SCHEMBL10384076 0.80 CES2 (0.39) CES2TSHRFDPSGGPS1THRA
SCHEMBL372482 0.74 ZDHHC20 (0.41) CES2TSHRFDPSGGPS1THRA
SCHEMBL1143902 0.72
SCHEMBL9004312 0.72 TDP1 (0.35)
SCHEMBL8521468 0.71 CES2 (0.42) CES2FDPSGGPS1MEN1MAPT
SCHEMBL19939441 0.71 CES2 (0.42) CES2FDPSGGPS1MEN1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12365815-B2 Polishing liquid, polishing liquid set, polishing method, and defect suppression method RESONAC CORPORATION (JP) 2025-07-22 US disclosed
EP-2960314-B1 POLISHING COMPOSITION AND METHOD FOR MANUFACTURING POLISHED ARTICLE FUJIMI INC (JP) 2024-06-26 EP disclosed
WO-2024095637-A1 ACTINIC-RAY-CURABLE COMPOSITION AND CURED OBJECT 三洋化成工業株式会社 2024-05-10 WO disclosed
EP-3159915-B1 METHOD FOR POLISHING SILICON WAFER, POLISHING COMPOSITION, AND POLISHING COMPOSITION SET FUJIMI INC (JP) 2023-12-06 EP disclosed
US-20230295466-A1 POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, AND DEFECT SUPPRESSION METHOD RESONAC CORPORATION (JP) 2023-09-21 US disclosed
US-11649377-B2 Polishing liquid, polishing liquid set and polishing method RESONAC CORPORATION (JP) 2023-05-16 US disclosed
EP-3133638-B1 COMPOSITION FOR POLISHING SILICON WAFERS FUJIMI INC (JP) 2021-10-27 EP disclosed
EP-2957613-B1 POLISHING COMPOSITION, METHOD FOR PRODUCING POLISHING COMPOSITION AND METHOD FOR PRODUCING POLISHED ARTICLE FUJIMI INC (JP) 2020-11-18 EP disclosed
US-20200299544-A1 POLISHING LIQUID, POLISHING LIQUID SET AND POLISHING METHOD RESONAC CORPORATION (JP) 2020-09-24 US disclosed
US-20200283659-A1 POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, ANDDEFECT SUPPRESSION METHOD RESONAC CORPORATION (JP) 2020-09-10 US disclosed
EP-2138519-B1 Porous resin beads and method of producing nucleic acid using the same NITTO DENKO CORP (JP) 2011-01-19 EP disclosed
US-7838482-B2 CMP polishing compound and polishing method HITACHI CHEMICAL CO. LTD. (JP) 2010-11-23 US disclosed
US-7837800-B2 CMP polishing slurry and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2010-11-23 US disclosed
US-20090326210-A1 POROUS RESIN BEADS AND METHOD OF PRODUCING NUCLEIC ACID USING THE SAME NITTO DENKO CORPORATION (JP) 2009-12-31 US disclosed
US-20090047786-A1 CMP Abrasive Slurry for Polishing Insulation Film, Polishing Method, and Semiconductor Electronic Part Polished by the Polishing Method RESONAC CORPORATION (JP) 2009-02-19 US disclosed
US-20080214093-A1 CMP polishing slurry and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2008-09-04 US disclosed
EP-1956642-A1 POLISHING AGENT FOR SILICON OXIDE, LIQUID ADDITIVE, AND METHOD OF POLISHING Hitachi Chemical Co., Ltd. (JP) 2008-08-13 EP disclosed
US-20070175104-A1 Polishing slurry for silicon oxide, additive liquid and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20060289826-A1 Hazardous substance decomposer and process for producing the same RESONAC CORPORATION (JP) 2006-12-28 US disclosed
US-20060148667-A1 Cmp polishing compound and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090326210-A1 POROUS RESIN BEADS AND METHOD OF PRODUCING NUCLEIC ACID USING THE SAME PCNA, ARID2, PHAX CES2 3933/4885TSHR 4117/4885FDPS 427/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.