SCHEMBL372482

SCHEMBL372482

C=CC(=O)N(C(C)(C)CCCCC)C(C)(C)CCCCC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ZDHHC20 Q5W0Z9 3/20 0.41
ZDHHC2 Q9UIJ5 2/20 0.41
GMNN O75496 1/20 0.37
USP2 O75604 1/20 0.37
CYP1A2 P05177 1/20 0.37
POLB P06746 1/20 0.37
CYP3A4 P08684 1/20 0.37
CYP2D6 P10635 1/20 0.37
CYP2C9 P11712 1/20 0.37
APEX1 P27695 1/20 0.37
CYP2C19 P33261 1/20 0.37
RECQL P46063 1/20 0.37
BLM P54132 1/20 0.37
HSD17B10 Q99714 1/20 0.37
TSHR P16473 2/20 0.36
HPGD P15428 1/20 0.36
CES2 O00748 1/20 0.35
THRA P10827 4/20 0.33
THRB P10828 4/20 0.33
GGPS1 O95749 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL10384117 0.80 ZDHHC20 (0.41) ZDHHC20ZDHHC2GMNNUSP2CYP1A2
Hydrochloric Acid SCHEMBL10383869 0.80 ZDHHC20 (0.41) ZDHHC20ZDHHC2GMNNUSP2CYP1A2
SCHEMBL3935590 0.78 ALDH1A1 (0.37) ZDHHC20ZDHHC2TSHRTHRB
SCHEMBL372522 0.74 CES2 (0.39) TSHRCES2THRATHRBGGPS1
SCHEMBL9004318 0.72 KDM4E (0.31) TSHR
SCHEMBL1144163 0.72 THRA (0.32) TSHRTHRATHRB
SCHEMBL24690402 0.70 ZDHHC20 (0.42) ZDHHC20ZDHHC2TSHRHPGDCES2
SCHEMBL20937775 0.70 ZDHHC20 (0.42) ZDHHC20ZDHHC2GMNNUSP2CYP1A2
SCHEMBL17710489 0.70 GGPS1 (0.39) CES2GGPS1FDPS
SCHEMBL17710530 0.68 GGPS1 (0.42) CES2GGPS1FDPS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12365815-B2 Polishing liquid, polishing liquid set, polishing method, and defect suppression method RESONAC CORPORATION (JP) 2025-07-22 US disclosed
EP-2960314-B1 POLISHING COMPOSITION AND METHOD FOR MANUFACTURING POLISHED ARTICLE FUJIMI INC (JP) 2024-06-26 EP disclosed
EP-3159915-B1 METHOD FOR POLISHING SILICON WAFER, POLISHING COMPOSITION, AND POLISHING COMPOSITION SET FUJIMI INC (JP) 2023-12-06 EP disclosed
US-20230295466-A1 POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, AND DEFECT SUPPRESSION METHOD RESONAC CORPORATION (JP) 2023-09-21 US disclosed
US-11649377-B2 Polishing liquid, polishing liquid set and polishing method RESONAC CORPORATION (JP) 2023-05-16 US disclosed
EP-3133638-B1 COMPOSITION FOR POLISHING SILICON WAFERS FUJIMI INC (JP) 2021-10-27 EP disclosed
EP-2957613-B1 POLISHING COMPOSITION, METHOD FOR PRODUCING POLISHING COMPOSITION AND METHOD FOR PRODUCING POLISHED ARTICLE FUJIMI INC (JP) 2020-11-18 EP disclosed
US-20200299544-A1 POLISHING LIQUID, POLISHING LIQUID SET AND POLISHING METHOD RESONAC CORPORATION (JP) 2020-09-24 US disclosed
US-20200283659-A1 POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, ANDDEFECT SUPPRESSION METHOD RESONAC CORPORATION (JP) 2020-09-10 US disclosed
US-10745588-B2 Silicon wafer polishing composition FUJIMI INCORPORATED (JP) 2020-08-18 US disclosed
EP-2410558-A2 Polishing slurry for silicon oxide, additive liquid and polishing method Hitachi Chemical Co., Ltd. (JP) 2012-01-25 EP disclosed
US-20110028073-A1 CMP POLISHING SLURRY AND POLISHING METHOD HITACHI CHEMICAL CO., LTD. (JP) 2011-02-03 US disclosed
US-7838482-B2 CMP polishing compound and polishing method HITACHI CHEMICAL CO. LTD. (JP) 2010-11-23 US disclosed
US-7837800-B2 CMP polishing slurry and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2010-11-23 US disclosed
US-20090047786-A1 CMP Abrasive Slurry for Polishing Insulation Film, Polishing Method, and Semiconductor Electronic Part Polished by the Polishing Method RESONAC CORPORATION (JP) 2009-02-19 US disclosed
US-20080214093-A1 CMP polishing slurry and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2008-09-04 US disclosed
EP-1956642-A1 POLISHING AGENT FOR SILICON OXIDE, LIQUID ADDITIVE, AND METHOD OF POLISHING Hitachi Chemical Co., Ltd. (JP) 2008-08-13 EP disclosed
US-20070175104-A1 Polishing slurry for silicon oxide, additive liquid and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20060289826-A1 Hazardous substance decomposer and process for producing the same RESONAC CORPORATION (JP) 2006-12-28 US disclosed
US-20060148667-A1 Cmp polishing compound and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed