⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4197787 | 0.72 | — | — | |
| SCHEMBL26978251 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL21248713 | 0.71 | — | — | |
| SCHEMBL720869 | 0.71 | — | — | |
| SCHEMBL18817990 | 0.71 | — | — | |
| SCHEMBL23830001 | 0.71 | — | — | |
| SCHEMBL27997137 | 0.69 | — | — | |
| SCHEMBL667067 | 0.69 | CTSD (0.33) | — | |
| Ether SCHEMBL3224975 | 0.68 | — | — | |
| SCHEMBL2234886 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9534285-B2 | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films | ENTEGRIS, INC. (US) | 2017-01-03 | — | — | US | claimed |
| US-20140295071-A1 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2014-10-02 | — | — | US | claimed |
| US-8784936-B2 | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2014-07-22 | — | — | US | claimed |
| US-20130251918-A1 | STRONTIUM AND BARIUM PRECURSORS FOR USE IN CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION AND RAPID VAPOR DEPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-09-26 | — | — | US | claimed |
| US-8455049-B2 | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-06-04 | — | — | US | claimed |
| US-8293327-B2 | Process for forming the strontium-containing thin film | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2012-10-23 | — | — | US | claimed |
| US-8206784-B2 | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2012-06-26 | — | — | US | claimed |
| US-20120141675-A1 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2012-06-07 | — | — | US | claimed |
| US-7638074-B2 | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2009-12-29 | — | — | US | claimed |
| US-7635441-B2 | Raw material for forming a strontium-containing thin film and process for preparing the raw material | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2009-12-22 | — | — | US | claimed |
| US-20090074965-A1 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2009-03-19 | — | — | US | claimed |
| WO-2009020888-A1 | STRONTIUM AND BARIUM PRECURSORS FOR USE IN CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION AND RAPID VAPOR DEPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2009-02-12 | — | — | WO | claimed |
| US-20090001618-A1 | RAW MATERIAL FOR FORMING A STRONTIUM-CONTAINING THIN FILM AND PROCESS FOR PREPARING THE RAW MATERIAL | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2009-01-01 | — | — | US | claimed |
| US-20090004383-A1 | PROCESS FOR FORMING THE STRONTIUM-CONTAINING THIN FILM | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2009-01-01 | — | — | US | claimed |
| US-20130251918-A1 | STRONTIUM AND BARIUM PRECURSORS FOR USE IN CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION AND RAPID VAPOR DEPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-09-26 | — | — | US | disclosed |
| US-8455049-B2 | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-06-04 | — | — | US | disclosed |
| US-8455049-B2 | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-06-04 | — | — | US | disclosed |
| US-20090004383-A1 | PROCESS FOR FORMING THE STRONTIUM-CONTAINING THIN FILM | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20090004383-A1 | PROCESS FOR FORMING THE STRONTIUM-CONTAINING THIN FILM | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20090001618-A1 | RAW MATERIAL FOR FORMING A STRONTIUM-CONTAINING THIN FILM AND PROCESS FOR PREPARING THE RAW MATERIAL | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2009-01-01 | — | — | US | disclosed |