SCHEMBL3748389

SCHEMBL3748389

O=C(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O.[LiH]

nearest known ligand 0.50

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.50
ALDH1A1 P00352 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.46
ACLY P53396 2/20 0.31
CA1 P00915 2/20 0.31
CA2 P00918 2/20 0.31
MMP1 P03956 2/20 0.31
MMP2 P08253 2/20 0.31
MMP9 P14780 2/20 0.31
MMP8 P22894 2/20 0.31
MMP13 P45452 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2438984 0.98 THRB (0.52) THRBALDH1A1L3MBTL1ACLYCA1
SCHEMBL3749530 0.93 ALDH1A1 (0.48) THRBALDH1A1L3MBTL1ACLY
SCHEMBL2439706 0.91 ALDH1A1 (0.50) THRBALDH1A1L3MBTL1ACLY
SCHEMBL28287540 0.90 THRB (0.68) THRBALDH1A1L3MBTL1CA1CA2
SCHEMBL22322505 0.90 THRB (0.68) THRBALDH1A1L3MBTL1CA1CA2
SCHEMBL27224348 0.90 THRB (0.68) THRBALDH1A1L3MBTL1CA1CA2
SCHEMBL16505927 0.88 THRB (0.65) THRBALDH1A1L3MBTL1CA1CA2
SCHEMBL8523502 0.83 ALDH1A1 (0.41) ALDH1A1L3MBTL1CA1CA2MMP1
SCHEMBL3745426 0.83 ALDH1A1 (0.41) ALDH1A1L3MBTL1CA1CA2MMP1
SCHEMBL10892306 0.80 ALDH1A1 (0.55) THRBALDH1A1L3MBTL1ACLY

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
US-7521170-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-04-21 US disclosed
US-20090087782-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2009-04-02 US disclosed
EP-1915360-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2008-04-30 EP disclosed
WO-2007007175-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIAL USA CORP. (DE) 2007-01-18 WO disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed