SCHEMBL3749530

SCHEMBL3749530

O=C(O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O.[LiH]

nearest known ligand 0.48

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
THRB P10828 1/20 0.46
ACLY P53396 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2439706 0.98 ALDH1A1 (0.50) ALDH1A1L3MBTL1THRBACLY
SCHEMBL3748389 0.93 THRB (0.50) ALDH1A1L3MBTL1THRBACLY
SCHEMBL2438984 0.91 THRB (0.52) ALDH1A1L3MBTL1THRBACLY
SCHEMBL28287540 0.83 THRB (0.68) ALDH1A1L3MBTL1THRB
SCHEMBL27224348 0.83 THRB (0.68) ALDH1A1L3MBTL1THRB
SCHEMBL22322505 0.83 THRB (0.68) ALDH1A1L3MBTL1THRB
SCHEMBL10892306 0.82 ALDH1A1 (0.55) ALDH1A1L3MBTL1THRBACLY
SCHEMBL16505927 0.81 THRB (0.65) ALDH1A1L3MBTL1THRB
SCHEMBL3745426 0.79 ALDH1A1 (0.41) ALDH1A1L3MBTL1
SCHEMBL8523502 0.79 ALDH1A1 (0.41) ALDH1A1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
US-7521170-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-04-21 US disclosed
US-20090087782-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2009-04-02 US disclosed
CN-101218225-A Photoactive compounds AZ ELECTRONIC MATERIALS USA (US) 2008-07-09 CN disclosed
EP-1915360-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2008-04-30 EP disclosed
WO-2007007175-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIAL USA CORP. (DE) 2007-01-18 WO disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed