SCHEMBL382685

SCHEMBL382685

O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)O)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.47
TP53 P04637 1/20 0.47
KMT2A Q03164 3/20 0.43
LMNA P02545 3/20 0.41
F2 P00734 1/20 0.41
PDCD1 Q15116 1/20 0.39
CD274 Q9NZQ7 1/20 0.39
CES1 P23141 1/20 0.39
MEN1 O00255 2/20 0.39
MAPK1 P28482 1/20 0.39
HIF1A Q16665 1/20 0.39
MGLL Q99685 1/20 0.39
ESR1 P03372 1/20 0.38
ESR2 Q92731 1/20 0.38
ALDH1A1 P00352 3/20 0.38
NPC1 O15118 2/20 0.38
RAB9A P51151 2/20 0.38
HTT P42858 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
TDP1 Q9NUW8 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrogen Sulfide SCHEMBL2882266 0.98 TSHR (0.46) TSHRTP53KMT2ALMNAF2
SCHEMBL482458 0.98 TSHR (0.46) TSHRTP53KMT2ALMNAF2
SCHEMBL18785766 0.94 TP53 (0.42) TSHRTP53KMT2ALMNAF2
SCHEMBL27860967 0.93 KMT2A (0.44) TSHRTP53KMT2ALMNAF2
SCHEMBL383712 0.91 PDCD1 (0.53) TSHRTP53KMT2APDCD1CD274
SCHEMBL1671829 0.90 PDCD1 (0.51) TSHRTP53KMT2APDCD1CD274
SCHEMBL974742 0.89 KMT2A (0.39) TSHRTP53KMT2ALMNAPDCD1
SCHEMBL6449938 0.89 TSHR (0.42) TSHRTP53KMT2APDCD1CD274
SCHEMBL18785977 0.89 MAPT (0.41) TSHRTP53KMT2ALMNAPDCD1
SCHEMBL19042453 0.88 TSHR (0.45) TSHRTP53KMT2ALMNAF2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 582 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638260-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-29 US claimed
WO-2026100367-A1 RESIST MATERIAL AND PATTERN FORMATION METHOD 東京応化工業株式会社 2026-05-15 WO disclosed
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-11822245-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-21 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230350296-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070264596-A1 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
EP-1829850-A2 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 TSHR 197/4885TP53 751/4885KMT2A 1434/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.