Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.46 |
| ▸ | TP53 | P04637 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.42 |
| ▸ | LMNA | P02545 | 3/20 | 0.40 |
| ▸ | F2 | P00734 | 1/20 | 0.40 |
| ▸ | PDCD1 | Q15116 | 1/20 | 0.38 |
| ▸ | CD274 | Q9NZQ7 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 2/20 | 0.38 |
| ▸ | CES1 | P23141 | 1/20 | 0.38 |
| ▸ | MGLL | Q99685 | 1/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.38 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.38 |
| ▸ | ESR1 | P03372 | 1/20 | 0.37 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.37 |
| ▸ | NPC1 | O15118 | 2/20 | 0.37 |
| ▸ | RAB9A | P51151 | 2/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | PRKCA | P17252 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL382685 | 0.98 | TSHR (0.47) | TSHRTP53KMT2ALMNAF2 | |
| Hydrogen Sulfide SCHEMBL2882266 | 0.97 | TSHR (0.46) | TSHRTP53KMT2ALMNAF2 | |
| SCHEMBL18785766 | 0.93 | TP53 (0.42) | TSHRTP53KMT2ALMNAF2 | |
| SCHEMBL27860967 | 0.91 | KMT2A (0.44) | TSHRTP53KMT2ALMNAF2 | |
| SCHEMBL1671829 | 0.91 | PDCD1 (0.51) | TSHRTP53KMT2APDCD1CD274 | |
| SCHEMBL383712 | 0.90 | PDCD1 (0.53) | TSHRTP53KMT2APDCD1CD274 | |
| SCHEMBL974742 | 0.88 | KMT2A (0.39) | TSHRTP53KMT2ALMNAPDCD1 | |
| SCHEMBL6449938 | 0.88 | TSHR (0.42) | TSHRTP53KMT2APDCD1CD274 | |
| SCHEMBL18785977 | 0.87 | MAPT (0.41) | TSHRTP53KMT2ALMNAPDCD1 | |
| SCHEMBL19042453 | 0.86 | TSHR (0.45) | TSHRTP53KMT2ALMNAF2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2033966-B1 | Novel photoacid generators, resist compositons, and patterning processes | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| EP-2256551-B1 | Pattern forming process using a chemically amplified resist composition | SHINETSU CHEMICAL CO (JP) | 2015-05-13 | — | — | EP | disclosed |
| US-8609889-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-17 | — | — | US | disclosed |
| US-8597869-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-03 | — | — | US | disclosed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | disclosed |
| US-8288076-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| EP-2112554-B1 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-06-06 | — | — | EP | disclosed |
| US-20120100486-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-26 | — | — | US | disclosed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | disclosed |
| US-8057985-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080318160-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | RITTAL GMBH & CO. KG (DE) | 2008-12-25 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080032231-A1 | Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern | SHIN-ETSU CHEMICAL CO., LTD. | 2008-02-07 | — | — | US | disclosed |
| US-20070264596-A1 | Thermal acid generator, resist undercoat material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070099113-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| EP-1780199-A1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-05-02 | — | — | EP | disclosed |
| US-20060228648-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-10-12 | — | — | US | disclosed |
| EP-1710230-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-10-11 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120100486-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | STS, SLC6A5, SLC6A9 | TSHR 3157/4885TP53 3101/4885KMT2A 2196/4885 |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | TSHR 1794/4885TP53 4538/4885KMT2A 3509/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | TSHR 1699/4885TP53 4475/4885KMT2A 1964/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.