SCHEMBL383712

SCHEMBL383712

O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)O)c1ccc(-c2ccccc2)cc1

nearest known ligand 0.53

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
PDCD1 Q15116 1/20 0.53
CD274 Q9NZQ7 1/20 0.53
ABHD6 Q9BV23 1/20 0.42
PTPN1 P18031 1/20 0.42
ESR1 P03372 1/20 0.41
ESR2 Q92731 1/20 0.41
SLC1A5 Q15758 1/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
KDM4E B2RXH2 1/20 0.40
TP53 P04637 1/20 0.39
TSHR P16473 1/20 0.39
UTS2R Q9UKP6 1/20 0.38
MAPT P10636 1/20 0.38
KMT2A Q03164 1/20 0.37
EGFR P00533 1/20 0.37
FASN P49327 1/20 0.36
IGF2BP2 Q9Y6M1 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1671829 0.99 PDCD1 (0.51) PDCD1CD274ABHD6PTPN1ESR1
SCHEMBL382685 0.91 TSHR (0.47) PDCD1CD274ESR1ESR2SMN1; SMN2
SCHEMBL482458 0.90 TSHR (0.46) PDCD1CD274ESR1ESR2SMN1; SMN2
Hydrogen Sulfide SCHEMBL2882266 0.90 TSHR (0.46) PDCD1CD274ESR1ESR2SMN1; SMN2
SCHEMBL18785766 0.89 TP53 (0.42) PDCD1CD274ESR1ESR2SMN1; SMN2
SCHEMBL1671825 0.88 PDCD1 (0.49) PDCD1CD274ABHD6PTPN1ESR1
SCHEMBL6449938 0.87 TSHR (0.42) PDCD1CD274ESR1ESR2SMN1; SMN2
SCHEMBL18785977 0.86 MAPT (0.41) PDCD1CD274ESR1ESR2SMN1; SMN2
SCHEMBL18785759 0.85 LMNA (0.42) PDCD1CD274ESR1ESR2SMN1; SMN2
SCHEMBL18786007 0.85 MLYCD (0.36) PDCD1CD274ESR1ESR2SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 215 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638260-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-29 US claimed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
CN-106444288-B Chemically amplified positive resist composition and pattern forming method 信越化学工业株式会社 2021-04-09 CN disclosed
EP-3163374-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-02 EP disclosed
US-10815572-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-27 US disclosed
EP-2955576-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-07-22 EP disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070264596-A1 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070264596-A1 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
EP-1829850-A2 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST PDCD1 4807/4885CD274 4842/4885ABHD6 3147/4885
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 PDCD1 3840/4885CD274 4426/4885ABHD6 2349/4885
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 PDCD1 4607/4885CD274 4149/4885ABHD6 226/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 PDCD1 4095/4885CD274 4443/4885ABHD6 2463/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.