SCHEMBL383717

SCHEMBL383717

C=Cc1c(O)ccc2cc3ccccc3cc12

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ERN1 O75460 2/20 0.46
KMT2A Q03164 6/20 0.44
MEN1 O00255 5/20 0.44
ALOX5 P09917 2/20 0.41
MAPT P10636 7/20 0.40
PTPN22 Q9Y2R2 1/20 0.39
TRPM4 Q8TD43 1/20 0.39
GAA P10253 4/20 0.39
ALDH1A1 P00352 4/20 0.39
KDM4E B2RXH2 4/20 0.39
L3MBTL1 Q9Y468 3/20 0.39
HPGD P15428 1/20 0.39
ATM Q13315 1/20 0.39
RRM1 P23921 1/20 0.39
HSD17B10 Q99714 2/20 0.39
HIF1A Q16665 2/20 0.39
CYP1B1 Q16678 1/20 0.39
NQO2 P16083 1/20 0.38
THRB P10828 2/20 0.38
ALOX15 P16050 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30273052 0.82 ERN1 (0.66) ERN1KMT2AMEN1MAPTPTPN22
SCHEMBL73027 0.82 ERN1 (0.66) ERN1KMT2AMEN1MAPTPTPN22
SCHEMBL2371288 0.81 ERN1 (0.70) ERN1
SCHEMBL29368544 0.79 ALDH1A1 (0.40) KMT2AMEN1MAPTGAAALDH1A1
SCHEMBL5068229 0.79 ALDH1A1 (0.40) KMT2AMEN1MAPTGAAALDH1A1
SCHEMBL10884580 0.79 ERN1 (0.43) ERN1KMT2AMEN1ALOX5MAPT
SCHEMBL9234416 0.78 ALDH1A1 (0.39) KMT2AMEN1MAPTGAAALDH1A1
SCHEMBL8712807 0.78 CYP2A6 (0.39) KMT2AMEN1MAPTGAAALDH1A1
SCHEMBL31236201 0.78 CYP1A2 (0.42) KMT2AMEN1MAPTGAAALDH1A1
SCHEMBL8714687 0.78 CYP1A2 (0.42) KMT2AMEN1MAPTGAAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US claimed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US claimed
US-8647808-B2 Fluorinated monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-11 US claimed
EP-2466379-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2013-07-17 EP claimed
US-20130143163-A1 RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-06 US claimed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US claimed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US claimed
EP-2466379-A1 Resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-06-20 EP claimed
US-20120148945-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-14 US claimed
US-20110250539-A1 FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-13 US claimed
US-20110177455-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US claimed
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-23 US claimed
US-20100266957-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-10-21 US claimed
US-11360387-B2 Silicon-containing underlayers ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2022-06-14 US disclosed
US-10437150-B2 Composition for forming resist underlayer film with reduced outgassing NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-10-08 US disclosed
US-20190041751-A1 SILICON-CONTAINING UNDERLAYERS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-02-07 US disclosed
US-20100178617-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-15 US disclosed
US-20100178618-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-15 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
JP-2005114968-A RESIST MATERIAL AND METHOD FOR FORMING PATTERN SHIN ETSU CHEM CO LTD 2005-04-28 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110250539-A1 FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-0, FRG1, H1-3 ERN1 2904/4885KMT2A 122/4885MEN1 229/4885
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS AFF1, H1-0, FRG1 ERN1 2489/4885KMT2A 105/4885MEN1 415/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.