Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.42 |
| ▸ | USP2 | O75604 | 4/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.42 |
| ▸ | MAPT | P10636 | 3/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.42 |
| ▸ | HPGD | P15428 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | TP53 | P04637 | 1/20 | 0.42 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 2/20 | 0.36 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.36 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.34 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.34 |
| ▸ | CHRM3 | P20309 | 2/20 | 0.34 |
| ▸ | PGR | P06401 | 1/20 | 0.34 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.34 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.34 |
| ▸ | HTR1A | P08908 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7759802 | 0.87 | ALDH1A1 (0.45) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL3835973 | 0.86 | ALDH1A1 (0.50) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL14700477 | 0.85 | ALOX15 (0.43) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL10020242 | 0.85 | TDP1 (0.47) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL304203 | 0.79 | TDP1 (0.54) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL10929502 | 0.79 | — | — | |
| SCHEMBL17683528 | 0.79 | ALDH1A1 (0.41) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL27498360 | 0.79 | TDP1 (0.35) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL14700391 | 0.78 | ALDH1A1 (0.45) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 | |
| SCHEMBL16146973 | 0.78 | USP2 (0.45) | ALDH1A1USP2CYP3A4MAPTSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-12001138-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-11934100-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-19 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-3796086-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-02-28 | — | — | EP | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-4250008-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-27 | — | — | EP | disclosed |
| CN-116804825-A | Composition for forming silicon-containing metal hard mask and pattern forming method | 信越化学工业株式会社 | 2023-09-26 | — | — | CN | disclosed |
| EP-2657767-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-10 | — | — | EP | disclosed |
| US-9069247-B2 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-30 | — | — | US | disclosed |
| US-8992790-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-31 | — | — | US | disclosed |
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | disclosed |
| US-20130284699-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-31 | — | — | US | disclosed |
| EP-2657767-A1 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-10-30 | — | — | EP | disclosed |
| EP-2628745-A1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-08-21 | — | — | EP | disclosed |
| US-20130210229-A1 | SILICON-CONTAINING SURFACE MODIFIER, RESIST LOWER LAYER FILM-FORMING COMPOSITION CONTAINING THE SAME, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-8198016-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-20090286188-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130210229-A1 | SILICON-CONTAINING SURFACE MODIFIER, RESIST LOWER LAYER FILM-FORMING COMPOSITION CONTAINING THE SAME, AND PATTERNING PROCESS | SIGLEC9, SIGLEC7, EPCAM | ALDH1A1 3101/4885USP2 1153/4885CYP3A4 3850/4885 |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | ALDH1A1 4644/4885USP2 731/4885CYP3A4 3839/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | ALDH1A1 4644/4885USP2 731/4885CYP3A4 3839/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.