SCHEMBL3842787

SCHEMBL3842787

CCO[SiH2]C(C)(C)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.43
ALDH1A1 P00352 2/20 0.40
TAAR1 Q96RJ0 1/20 0.40
ALOX15 P16050 1/20 0.40
KCNN4 O15554 2/20 0.39
LTA4H P09960 1/20 0.38
SMN1; SMN2 Q16637 2/20 0.37
KIF11 P52732 1/20 0.37
CYP2C19 P33261 1/20 0.36
HIF1A Q16665 1/20 0.36
ESR1 P03372 2/20 0.34
ESR2 Q92731 2/20 0.34
CYP3A4 P08684 1/20 0.34
RELA Q04206 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
POLB P06746 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27639903 0.83 MAPK1 (0.43) MAPK1ALDH1A1TAAR1ALOX15KCNN4
SCHEMBL5075175 0.82 MAPK1 (0.37) MAPK1ALDH1A1TAAR1ALOX15KCNN4
SCHEMBL5078174 0.77 MAPK1 (0.35) MAPK1ALDH1A1TAAR1ALOX15KCNN4
SCHEMBL3836326 0.77 MAPK1 (0.46) MAPK1ALDH1A1TAAR1ALOX15KCNN4
Biphenyl SCHEMBL27660685 0.77 ALDH1A1 (0.38) MAPK1ALDH1A1TAAR1ALOX15KCNN4
SCHEMBL5077302 0.77 SLC6A2 (0.34) MAPK1ALDH1A1TAAR1SMN1; SMN2CYP2C19
SCHEMBL5075218 0.76 SMN1; SMN2 (0.32) MAPK1ALDH1A1TAAR1ALOX15LTA4H
SCHEMBL2696842 0.76 MAPK1 (0.44) MAPK1ALDH1A1TAAR1ALOX15KCNN4
SCHEMBL3836967 0.74 SLC6A2 (0.45) MAPK1ALDH1A1TAAR1SMN1; SMN2CYP2C19
SCHEMBL708398 0.72 LMNA (0.39) MAPK1CYP2C19CYP3A4POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed