SCHEMBL708398

SCHEMBL708398

CCO[SiH2]C(C)(C)C(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.39
RIPK1 Q13546 2/20 0.39
CNR1 P21554 1/20 0.37
CNR2 P34972 1/20 0.37
POLB P06746 1/20 0.35
HRH1 P35367 4/20 0.33
HTR2A P28223 2/20 0.33
TSHR P16473 2/20 0.33
SLC6A3 Q01959 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
MAPK1 P28482 1/20 0.33
SIGMAR1 Q99720 1/20 0.33
CACNA1F O60840 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRA2B P18089 1/20 0.33
CHRM3 P20309 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706842 0.86 LMNA (0.37) LMNARIPK1CNR1CNR2HRH1
SCHEMBL702652 0.83 LTA4H (0.39) LMNARIPK1POLBTSHRCYP1A2
SCHEMBL10879018 0.81 HRH1 (0.41) RIPK1HRH1HTR2ATSHRSLC6A3
SCHEMBL22555995 0.80 LMNA (0.43) LMNARIPK1CNR1CNR2SLC6A3
SCHEMBL705924 0.76 RIPK1 (0.40) LMNARIPK1CNR1CNR2HRH1
SCHEMBL704144 0.76 ATM (0.39) LMNARIPK1CNR1CNR2HRH1
SCHEMBL27639903 0.72 MAPK1 (0.43) CYP3A4CYP2C19MAPK1KCNH2
SCHEMBL3842787 0.72 MAPK1 (0.43) POLBCYP3A4CYP2C19MAPK1
SCHEMBL9836474 0.72 LMNA (0.38) LMNARIPK1TSHRMAPK1
SCHEMBL19520998 0.72 KMT2A (0.43) CNR1CNR2TSHRCYP1A2CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed