SCHEMBL3843129

SCHEMBL3843129

O=C(c1ccc(I)cc1)c1ccc(C(=O)c2ccccc2C(=O)c2ccc(I)cc2)cc1

nearest known ligand 0.56

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 3/20 0.56
CDC25B P30305 2/20 0.53
ATM Q13315 1/20 0.53
NR4A1 P22736 1/20 0.52
ALDH1A1 P00352 2/20 0.50
TPMT P51580 1/20 0.50
LIG1 P18858 1/20 0.50
ITGA1 P56199 1/20 0.49
CDC25A P30304 1/20 0.48
HSD17B10 Q99714 1/20 0.48
CA1 P00915 2/20 0.48
CA2 P00918 2/20 0.48
SRD5A2 P31213 1/20 0.48
GAA P10253 1/20 0.47
MAPT P10636 1/20 0.47
GSK3B P49841 1/20 0.43
TDP1 Q9NUW8 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3846158 0.95 AKR1C3 (0.56) AKR1C3CDC25BATMNR4A1ALDH1A1
SCHEMBL7650897 0.90 AKR1C3 (0.73) AKR1C3CDC25BATMNR4A1ALDH1A1
SCHEMBL7850555 0.88 AKR1C3 (0.48) AKR1C3CDC25BATMNR4A1ALDH1A1
SCHEMBL3670138 0.87 LIG1 (0.47) AKR1C3CDC25BATMNR4A1ALDH1A1
SCHEMBL2479840 0.86 ALDH1A1 (0.70) ATMALDH1A1TPMTITGA1CA1
SCHEMBL3841301 0.85 TPMT (0.65) ALDH1A1TPMTITGA1CA1CA2
SCHEMBL9389844 0.85 TPMT (0.65) ALDH1A1TPMTITGA1CA1CA2
SCHEMBL1244094 0.85 TPMT (0.65) ALDH1A1TPMTITGA1CA1CA2
SCHEMBL29385980 0.84 KMT2A (0.62) AKR1C3CDC25BATMNR4A1ALDH1A1
SCHEMBL10396941 0.84 MAPT (0.71) AKR1C3CDC25BATMALDH1A1TPMT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
EP-1254917-B1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR CORP (JP) 2004-06-30 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 AKR1C3 3015/4885CDC25B 1197/4885ATM 1417/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.