SCHEMBL3841301

SCHEMBL3841301

O=C(c1ccc(I)cc1)c1ccc(C(=O)c2ccc(C(=O)c3ccc(I)cc3)cc2)cc1

nearest known ligand 0.65

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TPMT P51580 1/20 0.65
CA1 P00915 2/20 0.62
CA2 P00918 2/20 0.62
SRD5A2 P31213 5/20 0.55
LMNA P02545 2/20 0.55
MAPT P10636 2/20 0.55
HPGD P15428 2/20 0.55
HTT P42858 2/20 0.55
ESR1 P03372 1/20 0.55
ESR2 Q92731 1/20 0.55
PKM P14618 1/20 0.55
GSK3B P49841 1/20 0.54
ALDH1A1 P00352 3/20 0.52
ITGA1 P56199 1/20 0.48
MAPK1 P28482 1/20 0.44
SMN1; SMN2 Q16637 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9389844 1.00 TPMT (0.65) TPMTCA1CA2SRD5A2LMNA
SCHEMBL1244094 1.00 TPMT (0.65) TPMTCA1CA2SRD5A2LMNA
SCHEMBL9388483 0.92 TPMT (0.56) TPMTCA1CA2SRD5A2LMNA
SCHEMBL3468575 0.89 HTT (0.75) TPMTCA1CA2SRD5A2LMNA
SCHEMBL2479840 0.89 ALDH1A1 (0.70) TPMTCA1CA2SRD5A2LMNA
SCHEMBL24787903 0.87 TPMT (0.52) TPMTCA1CA2SRD5A2LMNA
SCHEMBL10075868 0.87 ALDH1A1 (0.76) TPMTCA1CA2SRD5A2LMNA
SCHEMBL8143209 0.87 LMNA (0.59) TPMTCA1CA2SRD5A2LMNA
SCHEMBL851491 0.87 SRD5A2 (0.64) TPMTCA1CA2SRD5A2HPGD
SCHEMBL9850489 0.87 TPMT (0.52) TPMTCA1CA2SRD5A2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
EP-1254917-B1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR CORP (JP) 2004-06-30 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 TPMT 2629/4885CA1 4338/4885CA2 4844/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.