Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | F2 | P00734 | 4/20 | 0.41 |
| ▸ | PRSS1 | P07477 | 3/20 | 0.40 |
| ▸ | PRSS2 | P07478 | 3/20 | 0.40 |
| ▸ | PRSS3 | P35030 | 3/20 | 0.40 |
| ▸ | CA1 | P00915 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 1/20 | 0.40 |
| ▸ | CA9 | Q16790 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | RORA | P35398 | 1/20 | 0.38 |
| ▸ | RORC | P51449 | 1/20 | 0.38 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.38 |
| ▸ | NR1H4 | Q96RI1 | 1/20 | 0.38 |
| ▸ | PGR | P06401 | 1/20 | 0.36 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.35 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.35 |
| ▸ | HTR6 | P50406 | 2/20 | 0.35 |
| ▸ | HCRTR1 | O43613 | 1/20 | 0.35 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.34 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.34 |
| ▸ | SLC1A1 | P43005 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL546738 | 1.00 | F2 (0.41) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL30098742 | 1.00 | F2 (0.41) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL20164940 | 0.88 | TUBB4A (0.41) | F2PRSS1PRSS2PRSS3KEAP1 | |
| SCHEMBL20164939 | 0.88 | TUBB4A (0.41) | F2PRSS1PRSS2PRSS3KEAP1 | |
| SCHEMBL4901088 | 0.88 | F2 (0.37) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL383751 | 0.81 | F2 (0.39) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL546652 | 0.81 | F2 (0.39) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL30098732 | 0.79 | NPC1 (0.37) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL546784 | 0.79 | NPC1 (0.37) | F2PRSS1PRSS2PRSS3CA1 | |
| SCHEMBL384997 | 0.79 | NPC1 (0.37) | F2PRSS1PRSS2PRSS3CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 255 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| US-20230176479-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-08 | — | — | US | disclosed |
| EP-4167028-A1 | NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-04-19 | — | — | EP | disclosed |
| CN-115885217-A | Negative resist film laminate and pattern forming method | 信越化学工业株式会社 | 2023-03-31 | — | — | CN | disclosed |
| US-11460774-B2 | Photosensitive resin composition, photosensitive dry film, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-04 | — | — | US | disclosed |
| EP-4050054-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | Shin-Etsu Chemical Co., Ltd. (JP) | 2022-08-31 | — | — | EP | disclosed |
| CN-114600045-A | Photosensitive resin composition, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2022-06-07 | — | — | CN | disclosed |
| US-11256174-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-02-22 | — | — | US | disclosed |
| EP-3671345-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2022-02-02 | — | — | EP | disclosed |
| CN-106610566-B | Chemically amplified positive resist composition and patterning method | 信越化学工业株式会社 | 2021-10-08 | — | — | CN | disclosed |
| US-20040068124-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-04-08 | — | — | US | disclosed |
| EP-1403295-A2 | Ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-03-31 | — | — | EP | disclosed |
| US-6713612-B2 | Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-03-30 | — | — | US | disclosed |
| US-20040033432-A1 | Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-19 | — | — | US | disclosed |
| US-20040033440-A1 | Photoacid generators, chemically amplified positive resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-19 | — | — | US | disclosed |
| US-6689530-B2 | ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-10 | — | — | US | disclosed |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-04 | — | — | US | disclosed |
| US-20030180653-A1 | Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-25 | — | — | US | disclosed |
| US-6512020-B1 | Photosensitive acid-donors in chemically amplified resist formulations. activated by irradiation with actinic electromagnetic radiation and electron beams. | CIBA SPECIALTY CHEMICALS CORPORATION | 2003-01-28 | — | — | US | disclosed |
| US-6261738-B1 | LATENT CURING CATALYSTS FOR PHOTORESISTS SUCH AS 2,2,2-TRIFLUORO-1-PHENYL-ETHANONE OXIME-O-METHYL SULFONATE | CIBA SPECIALTY CHEMICALS CORPORATION | 2001-07-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20040033432-A1 | Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process | POLL, PIM3, VEGFA | F2 4757/4885PRSS1 2335/4885PRSS2 1675/4885 |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | VEGFA, DNMT3A, PIM3 | F2 4816/4885PRSS1 1858/4885PRSS2 2397/4885 |
| US-20040068124-A1 | Novel ester compounds, polymers, resist compositions and patterning process | DHCR24, EEF1D, MUS81 | F2 1418/4885PRSS1 3741/4885PRSS2 3625/4885 |
| US-20030180653-A1 | Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process | CACNA1A, KCNA1, POLL | F2 3709/4885PRSS1 3233/4885PRSS2 2141/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.