SCHEMBL385151

SCHEMBL385151

CCCCCCOc1ccc(S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)c2ccc(OCCCCCC)cc2C)c(C)c1

nearest known ligand 0.53

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
PDIA6 Q15084 1/20 0.53
THRA P10827 3/20 0.46
THRB P10828 3/20 0.46
NR5A1 Q13285 1/20 0.42
TP53 P04637 1/20 0.42
TSHR P16473 1/20 0.42
PLA2G4B P0C869 3/20 0.41
NPC1 O15118 1/20 0.40
RAB9A P51151 1/20 0.40
PTPN11 Q06124 1/20 0.40
RARB P10826 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6744176 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL6741835 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL6739637 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL6736812 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL30667567 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL6738526 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL6743631 1.00 PDIA6 (0.53) PDIA6THRATHRBNR5A1TP53
SCHEMBL6740264 0.99 PDIA6 (0.55) PDIA6THRATHRBNR5A1TP53
SCHEMBL6741158 0.96 PDIA6 (0.54) PDIA6THRATHRBNR5A1TP53
SCHEMBL6741894 0.88 PDIA6 (0.41) PDIA6NR5A1TP53TSHRPLA2G4B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 177 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 CN disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
CN-109563371-B Polysiloxane composition comprising acetal-protected silanol groups 日产化学株式会社 2021-09-21 CN disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
EP-3309614-A1 RADIATION SENSITIVE COMPOSITION Nissan Chemical Industries, Ltd. (JP) 2018-04-18 EP disclosed
US-20050208424-A1 (Meth)acrylate polymer comprising (co)monomers having adamantane group such as 2-ethyl-2-adamantyl-methacrylate, 10.0 g of hydroxyadamantyl methacrylate, 15.2 g of 4,8-dioxatricyclo[4.2.1.03,7]nonan-5-on-2-yl methacrylate; sensitive to high energy radiation; resolution; micropatterning SHIN-ETSU CHEMICAL CO., LTD. 2005-09-22 US disclosed
US-20050106500-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 US disclosed
US-20050095533-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-05 US disclosed
US-20050089796-A1 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-28 US disclosed
US-20050058938-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-17 US disclosed
US-20050031988-A1 Resist polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-10 US disclosed
US-20050031989-A1 Resist polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-10 US disclosed
EP-1505443-A2 Resist polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-09 EP disclosed
US-6689530-B2 ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-10 US disclosed
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 PDIA6 1565/4885THRA 3024/4885THRB 2831/4885
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process CACNA1A, KCNA1, POLL PDIA6 2603/4885THRA 4108/4885THRB 4655/4885
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION RER1, RAD1, RAD51 PDIA6 1875/4885THRA 3040/4885THRB 2645/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 PDIA6 3848/4885THRA 1735/4885THRB 1617/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.